Transistors
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Channel Type | Drain Source Voltage Vds | Continuous Drain Current Id | Drain Source On State Resistance | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N2484
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SC15367 |
Bipolar Transistor, NPN, 60V, 50mA, TO-18 MULTICOMP PRO NPN bipolar silicon transistor designed for applications such as medium-speed switching and amplifiers from audio to VHF frequencies. • Multicomp Pro products are rated 4.6 out of 5 stars • 12-month limited warranty *view Terms & Conditions for details • 9...
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SUP90P06-09L-E3
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SC16831 |
Power MOSFET, P Channel, 60 V, 90 A, 0.0074 ohm, TO-220AB, Through Hole VISHAY The SUP90P06-09L-E3 is a P-channel TrenchFET® Power MOSFET with 175°C operating temperature. • ±20V Gate-source voltage • 62°C/W Junction-to-ambient free air thermal resistance • 0.6°C/W Junction-to-case thermal resistance
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P Channel | 60V | 90A | 0.0074ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
STE53NC50
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SC17022 |
MOSFET Transistor, N Channel, 53 A, 500 V, 0.08 ohm, 10 V, 3 V STMICROELECTRONICS The STE53NC50 is a 500V N-channel PowerMesh™II MOSFET with extremely high dv/dt capability. The layout refinements introduced greatly improve the area figure of merit while keeping the device at the leading edge for what concerns switching speed, gate char...
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1+ €38.0562 (€46.81) 3+ €36.2474 (€44.58) 10+ €33.6532 (€41.39) |
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N Channel | 500V | 53A | 0.08ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N7000-D26Z
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SC15741 |
Power MOSFET, N Channel, 60V, 200mA, 5 Ohm, TO-92 ONSEMI The 2N7000_D26Z is a 60V N-channel enhancement mode Field Effect Transistor produced using high cell density, DMOS technology. It has been designed to minimize on-state resistance while providing rugged, reliable and fast switching performance. This can be...
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N Channel | 60V | 200mA | 5ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MJ15004G
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SC15817 |
Bipolar (BJT) Single Transistor, Audio, PNP, -140V, -20A, 250W, TO-3 ONSEMI The MJ15004G is a -140V Silicon PNP Bipolar Complementary Power Transistor designed for high power audio, disk head positioners and other linear applications. • High DC current gain • High safe operating area • For low distortion complementary designs
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2N7002KT1G
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SC15991 |
Power MOSFET, N Channel, 60V, 380mA, 1.19 Ohm, SOT-23, SMD ONSEMI The 2N7002KT1G is a N-channel Small Signal MOSFET offers 60V drain source voltage and 320mA steady state drain current. It is suitable for low side load switch, level shift circuits, DC-to-DC converter, portable DSC and PDA applications. • Low RDS (ON) • S...
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N Channel | 60V | 380mA | 1.19ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NX3008NBKS,115
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SC16798 |
Dual MOSFET, N Channel, 30V, 350mA, 1 ohm, SOT-363, Surface Mount NEXPERIA The NX3008NBKS is a dual N-channel enhancement mode Field-Effect Transistor (FET) in a surface mounted device (SMD) plastic package using Trench MOSFET technology. Suitable for high-speed line driver and low-side loadswitch. • Very fast switching • Low thr...
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J109
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SC15911 |
JFET Transistor, JFET, -25V, 40mA, 6V, TO-92 ONSEMI The J109 is a N-channel Switch. This device is designed for digital switching applications with low on resistance. • 10mA Forward gate current • 625mW Total device dissipation
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N Channel | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFR9024NTRPBF
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SC16835 |
Power MOSFET, P Channel, 55 V, 11 A, 0.175 ohm, TO-252AA, Surface Mount INFINEON The IRFR9024NTRPBF is a HEXFET® fifth generation single P-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design...
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P Channel | 55V | 11A | 0.175ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMBT3904-7-F
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SC15981 |
Bipolar (BJT) Single Transistor, NPN, 40V, 200mA, 300mW, SOT-23, SMD DIODES INC. MMBT3904-7-F is a 40V NPN small signal transistor. It is ideal for medium power amplification and switching. • Collector-base breakdown voltage is 60V minimum at (IC = 10μA, IE = 0) • Collector cut-off current is 50nA maximum at (VCE = 30V, VEB(off) = 3.0V...
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PDTC143ZT,215
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SC15944 |
Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50V, 100mA, 4.7 kohm, 47 kohm NEXPERIA The PDTC143ZT is a 4.7 to 47kΩ NPN Resistor Equipped Transistor (RET) in a small surface-mount plastic package. • Reduces component count • Built-in bias resistors • Reduces pick and place costs • Simplifies circuit design • AEC-Q101 qualified • PNP comple...
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BC857
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SC16095 |
Bipolar (BJT) Single Transistor, PNP, -45V, -100mA, 250mW, SOT-23, SMD MULTICOMP PRO The BC857 is a general purpose PNP Transistor with low voltage and current. Designed for use with general purpose amplification and switching applications. • 4.5pF Collector capacitance • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limit...
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PMV48XP,215
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SC16841 |
Power MOSFET, P Channel, 20 V, 3.5 A, 0.048 ohm, SOT-23, Surface Mount NEXPERIA The PMV48XP is a P-channel enhancement-mode FET in a small surface-mount plastic package using Trench MOSFET technology. It is suitable for use in relay driver, high-speed line driver, High-side load-switch and switching circuit applications. • Logic-level...
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P Channel | 20V | 3.5A | 0.048ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CSD18540Q5BT
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SC16687 |
SMD Power MOSFET N Channel NexFET Transistor, 60V, 100A TEXAS INSTRUMENTS The CSD18540Q5BT is a NexFET™ N-channel Power MOSFET designed to minimize losses in power conversion applications. It is suitable for use in DC-to-DC conversion, secondary side synchronous rectifier and isolated converter primary side switch applications. ...
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N Channel | 60V | 100A | 0.0018ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSH108,215
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SC16727 |
Power MOSFET, N Channel, 30 V, 1.9 A, 0.077 ohm, SOT-23, Surface Mount NEXPERIA The BSH108,215 is a N-channel enhancement-mode FET in a plastic package using TrenchMOS™1 technology. It is suitable for use in battery management, high speed switch and low power DC to DC converter applications. • Very fast switching • Logic level compati...
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N Channel | 30V | 1.9A | 0.077ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC546ABU
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SC15781 |
Bipolar (BJT) Single Transistor, NPN, 65V, 100mA, 500mW, TO-92 ONSEMI The BC546ABU is a NPN epitaxial silicon Bipolar Transistor suitable for switching and amplifier applications. • High voltage VCEO • Complement to BC556
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2N2102
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SC15366 |
Bipolar Transistor, NPN, 65V, 1A, TO-39 MULTICOMP PRO The 2N2102 is a high-performance, general-purpose NPN bipolar junction transistor designed for a wide range of applications. With its high current gain, low noise figure, and low saturation voltage, this transistor is ideal for use in amplifier circuits, s...
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BC848BLT1G
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SC16028 |
Bipolar (BJT) Single Transistor, NPN, 30V, 100mA, 300mW, SOT-23, SMD ONSEMI The BC848BLT1G is a NPN general purpose Bipolar Transistor designed for use in linear and switching applications. The device is housed in the package which is designed for lower power surface-mount applications. • Moisture sensitivity level-1 • AEC-Q101 qu...
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IRFP27N60KPBF
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SC15838 |
Power MOSFET, N Channel, 600V, 27A, 0.22 ohm, TO-247AC VISHAY The IRFP27N60KPBF is a 600V N-channel SMPS MOSFET with low gate charge Qg results in simple drive requirement. It operates at high frequency with hard switching application. Suitable for SMPS and high speed power switching and motor drive applications. • E...
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N Channel | 600V | 27A | 0.22ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRLR3110ZTRPBF
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SC15961 |
Power MOSFET, N Channel, 100V, 42A, 0.011 Ohm, TO-252AA, SMD INFINEON • HEXFET® power MOSFET specifically designed for Industrial applications • Advanced process technology • Ultra-low on-resistance • 175°C operating temperature • Fast switching • Repetitive avalanche allowed up to Tjmax
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N Channel | 100V | 42A | 0.011ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDS4559
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SC16692 |
SMD Dual MOSFET PowerTrench Complementary N and P Channel Transistor, 60V, 4.5A ONSEMI The FDS4559 is a complementary MOSFET device is produced using advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Suitable for LCD backligh...
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Complementary N and P Channel | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC847C,215
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SC16008 |
Bipolar (BJT) Single Transistor, General Purpose, NPN, 45V, 100mA, 250mW, SOT-23, SMD NEXPERIA BC847C,215 is a 45V, 100mA NPN general-purpose transistor in a SOT23 package. Suitable for general-purpose switching and amplification. • SMD plastic package • 250mW power dissipation • Ambient temperature range from -65°C to 150°C
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DMN6140L-7
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SC16777 |
Power MOSFET, N Channel, 60 V, 1.6 A, 0.14 ohm, SOT-23, Surface Mount DIODES INC. The DMN6140L-7 from DIODES is a 60V N Channel enhanced mode MOSFET, it's designed to minimise the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • Suitable for DC to D...
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N Channel | 60V | 1.6A | 0.14ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CSD18537NQ5A
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SC17013 |
Power MOSFET, N Channel, 60 V, 50 A, 0.01 ohm, VSON, Surface Mount TEXAS INSTRUMENTS • Channel Type : N Channel • Drain Source Voltage Vds : 60V • Continuous Drain Current Id : 50A • Drain Source On State Resistance : 0.01ohm
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N Channel | 60V | 50A | 0.01ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SPP17N80C3XKSA1
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SC16976 |
Power MOSFET, N Channel, 800 V, 17 A, 0.25 ohm, TO-220, Through Hole INFINEON The SPP17N80C3 is a 800V CoolMOS™ N-channel Power MOSFET features ultra-low gate current. It is designed for high DC bulk voltage and switching applications. • New revolutionary high voltage technology • Extreme dV/dt rated • High peak current capability •...
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N Channel | 800V | 17A | 0.25ohm |