Transistors

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2N2484
2N2484 - Bipolar Transistor, NPN, 60V, 50mA, TO-18

SC15367

Bipolar Transistor, NPN, 60V, 50mA, TO-18

MULTICOMP PRO

NPN bipolar silicon transistor designed for applications such as medium-speed switching and amplifiers from audio to VHF frequencies. • Multicomp Pro products are rated 4.6 out of 5 stars • 12-month limited warranty *view Terms & Conditions for details • 9...

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SUP90P06-09L-E3
SUP90P06-09L-E3 - Power MOSFET, P Channel, 60 V, 90 A, 0.0074 ohm, TO-220AB, Through Hole

SC16831

Power MOSFET, P Channel, 60 V, 90 A, 0.0074 ohm, TO-220AB, Through Hole

VISHAY

The SUP90P06-09L-E3 is a P-channel TrenchFET® Power MOSFET with 175°C operating temperature. • ±20V Gate-source voltage • 62°C/W Junction-to-ambient free air thermal resistance • 0.6°C/W Junction-to-case thermal resistance

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P Channel 60V 90A 0.0074ohm
STE53NC50
STE53NC50 - MOSFET Transistor, N Channel, 53 A, 500 V, 0.08 ohm, 10 V, 3 V

SC17022

MOSFET Transistor, N Channel, 53 A, 500 V, 0.08 ohm, 10 V, 3 V

STMICROELECTRONICS

The STE53NC50 is a 500V N-channel PowerMesh™II MOSFET with extremely high dv/dt capability. The layout refinements introduced greatly improve the area figure of merit while keeping the device at the leading edge for what concerns switching speed, gate char...

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N Channel 500V 53A 0.08ohm
2N7000-D26Z
2N7000-D26Z - Power MOSFET, N Channel, 60V, 200mA, 5 Ohm, TO-92

SC15741

Power MOSFET, N Channel, 60V, 200mA, 5 Ohm, TO-92

ONSEMI

The 2N7000_D26Z is a 60V N-channel enhancement mode Field Effect Transistor produced using high cell density, DMOS technology. It has been designed to minimize on-state resistance while providing rugged, reliable and fast switching performance. This can be...

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N Channel 60V 200mA 5ohm
MJ15004G
MJ15004G - Bipolar (BJT) Single Transistor, Audio, PNP, -140V, -20A, 250W, TO-3

SC15817

Bipolar (BJT) Single Transistor, Audio, PNP, -140V, -20A, 250W, TO-3

ONSEMI

The MJ15004G is a -140V Silicon PNP Bipolar Complementary Power Transistor designed for high power audio, disk head positioners and other linear applications. • High DC current gain • High safe operating area • For low distortion complementary designs

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2N7002KT1G
2N7002KT1G - Power MOSFET, N Channel, 60V, 380mA, 1.19 Ohm, SOT-23, SMD

SC15991

Power MOSFET, N Channel, 60V, 380mA, 1.19 Ohm, SOT-23, SMD

ONSEMI

The 2N7002KT1G is a N-channel Small Signal MOSFET offers 60V drain source voltage and 320mA steady state drain current. It is suitable for low side load switch, level shift circuits, DC-to-DC converter, portable DSC and PDA applications. • Low RDS (ON) • S...

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N Channel 60V 380mA 1.19ohm
NX3008NBKS,115
NX3008NBKS,115 - Dual MOSFET, N Channel, 30V, 350mA, 1 ohm, SOT-363, Surface Mount

SC16798

Dual MOSFET, N Channel, 30V, 350mA, 1 ohm, SOT-363, Surface Mount

NEXPERIA

The NX3008NBKS is a dual N-channel enhancement mode Field-Effect Transistor (FET) in a surface mounted device (SMD) plastic package using Trench MOSFET technology. Suitable for high-speed line driver and low-side loadswitch. • Very fast switching • Low thr...

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J109
J109 - JFET Transistor, JFET, -25V, 40mA, 6V, TO-92

SC15911

JFET Transistor, JFET, -25V, 40mA, 6V, TO-92

ONSEMI

The J109 is a N-channel Switch. This device is designed for digital switching applications with low on resistance. • 10mA Forward gate current • 625mW Total device dissipation

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N Channel - - -
IRFR9024NTRPBF
IRFR9024NTRPBF - Power MOSFET, P Channel, 55 V, 11 A, 0.175 ohm, TO-252AA, Surface Mount

SC16835

Power MOSFET, P Channel, 55 V, 11 A, 0.175 ohm, TO-252AA, Surface Mount

INFINEON

The IRFR9024NTRPBF is a HEXFET® fifth generation single P-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design...

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P Channel 55V 11A 0.175ohm
MMBT3904-7-F
MMBT3904-7-F - Bipolar (BJT) Single Transistor, NPN, 40V, 200mA, 300mW, SOT-23, SMD

SC15981

Bipolar (BJT) Single Transistor, NPN, 40V, 200mA, 300mW, SOT-23, SMD

DIODES INC.

MMBT3904-7-F is a 40V NPN small signal transistor. It is ideal for medium power amplification and switching. • Collector-base breakdown voltage is 60V minimum at (IC = 10μA, IE = 0) • Collector cut-off current is 50nA maximum at (VCE = 30V, VEB(off) = 3.0V...

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PDTC143ZT,215
PDTC143ZT,215 - Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50V, 100mA, 4.7 kohm, 47 kohm

SC15944

Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50V, 100mA, 4.7 kohm, 47 kohm

NEXPERIA

The PDTC143ZT is a 4.7 to 47kΩ NPN Resistor Equipped Transistor (RET) in a small surface-mount plastic package. • Reduces component count • Built-in bias resistors • Reduces pick and place costs • Simplifies circuit design • AEC-Q101 qualified • PNP comple...

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BC857
BC857 - Bipolar (BJT) Single Transistor, PNP, -45V, -100mA, 250mW, SOT-23, SMD

SC16095

Bipolar (BJT) Single Transistor, PNP, -45V, -100mA, 250mW, SOT-23, SMD

MULTICOMP PRO

The BC857 is a general purpose PNP Transistor with low voltage and current. Designed for use with general purpose amplification and switching applications. • 4.5pF Collector capacitance • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limit...

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PMV48XP,215
PMV48XP,215 - Power MOSFET, P Channel, 20 V, 3.5 A, 0.048 ohm, SOT-23, Surface Mount

SC16841

Power MOSFET, P Channel, 20 V, 3.5 A, 0.048 ohm, SOT-23, Surface Mount

NEXPERIA

The PMV48XP is a P-channel enhancement-mode FET in a small surface-mount plastic package using Trench MOSFET technology. It is suitable for use in relay driver, high-speed line driver, High-side load-switch and switching circuit applications. • Logic-level...

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P Channel 20V 3.5A 0.048ohm
CSD18540Q5BT
CSD18540Q5BT - SMD Power MOSFET N Channel NexFET Transistor, 60V, 100A

SC16687

SMD Power MOSFET N Channel NexFET Transistor, 60V, 100A

TEXAS INSTRUMENTS

The CSD18540Q5BT is a NexFET™ N-channel Power MOSFET designed to minimize losses in power conversion applications. It is suitable for use in DC-to-DC conversion, secondary side synchronous rectifier and isolated converter primary side switch applications. ...

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N Channel 60V 100A 0.0018ohm
BSH108,215
BSH108,215 - Power MOSFET, N Channel, 30 V, 1.9 A, 0.077 ohm, SOT-23, Surface Mount

SC16727

Power MOSFET, N Channel, 30 V, 1.9 A, 0.077 ohm, SOT-23, Surface Mount

NEXPERIA

The BSH108,215 is a N-channel enhancement-mode FET in a plastic package using TrenchMOS™1 technology. It is suitable for use in battery management, high speed switch and low power DC to DC converter applications. • Very fast switching • Logic level compati...

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N Channel 30V 1.9A 0.077ohm
BC546ABU
BC546ABU - Bipolar (BJT) Single Transistor, NPN, 65V, 100mA, 500mW, TO-92

SC15781

Bipolar (BJT) Single Transistor, NPN, 65V, 100mA, 500mW, TO-92

ONSEMI

The BC546ABU is a NPN epitaxial silicon Bipolar Transistor suitable for switching and amplifier applications. • High voltage VCEO • Complement to BC556

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2N2102
2N2102 - Bipolar Transistor, NPN, 65V, 1A, TO-39

SC15366

Bipolar Transistor, NPN, 65V, 1A, TO-39

MULTICOMP PRO

The 2N2102 is a high-performance, general-purpose NPN bipolar junction transistor designed for a wide range of applications. With its high current gain, low noise figure, and low saturation voltage, this transistor is ideal for use in amplifier circuits, s...

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BC848BLT1G
BC848BLT1G - Bipolar (BJT) Single Transistor, NPN, 30V, 100mA, 300mW, SOT-23, SMD

SC16028

Bipolar (BJT) Single Transistor, NPN, 30V, 100mA, 300mW, SOT-23, SMD

ONSEMI

The BC848BLT1G is a NPN general purpose Bipolar Transistor designed for use in linear and switching applications. The device is housed in the package which is designed for lower power surface-mount applications. • Moisture sensitivity level-1 • AEC-Q101 qu...

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IRFP27N60KPBF
IRFP27N60KPBF - Power MOSFET, N Channel, 600V, 27A, 0.22 ohm, TO-247AC

SC15838

Power MOSFET, N Channel, 600V, 27A, 0.22 ohm, TO-247AC

VISHAY

The IRFP27N60KPBF is a 600V N-channel SMPS MOSFET with low gate charge Qg results in simple drive requirement. It operates at high frequency with hard switching application. Suitable for SMPS and high speed power switching and motor drive applications. • E...

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N Channel 600V 27A 0.22ohm
IRLR3110ZTRPBF
IRLR3110ZTRPBF - Power MOSFET, N Channel, 100V, 42A, 0.011 Ohm, TO-252AA, SMD

SC15961

Power MOSFET, N Channel, 100V, 42A, 0.011 Ohm, TO-252AA, SMD

INFINEON

• HEXFET® power MOSFET specifically designed for Industrial applications • Advanced process technology • Ultra-low on-resistance • 175°C operating temperature • Fast switching • Repetitive avalanche allowed up to Tjmax

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N Channel 100V 42A 0.011ohm
FDS4559
FDS4559 - SMD Dual MOSFET PowerTrench Complementary N and P Channel Transistor, 60V, 4.5A

SC16692

SMD Dual MOSFET PowerTrench Complementary N and P Channel Transistor, 60V, 4.5A

ONSEMI

The FDS4559 is a complementary MOSFET device is produced using advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Suitable for LCD backligh...

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Complementary N and P Channel - - -
BC847C,215
BC847C,215 - Bipolar (BJT) Single Transistor, General Purpose, NPN, 45V, 100mA, 250mW, SOT-23, SMD

SC16008

Bipolar (BJT) Single Transistor, General Purpose, NPN, 45V, 100mA, 250mW, SOT-23, SMD

NEXPERIA

BC847C,215 is a 45V, 100mA NPN general-purpose transistor in a SOT23 package. Suitable for general-purpose switching and amplification. • SMD plastic package • 250mW power dissipation • Ambient temperature range from -65°C to 150°C

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DMN6140L-7
DMN6140L-7 - Power MOSFET, N Channel, 60 V, 1.6 A, 0.14 ohm, SOT-23, Surface Mount

SC16777

Power MOSFET, N Channel, 60 V, 1.6 A, 0.14 ohm, SOT-23, Surface Mount

DIODES INC.

The DMN6140L-7 from DIODES is a 60V N Channel enhanced mode MOSFET, it's designed to minimise the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • Suitable for DC to D...

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N Channel 60V 1.6A 0.14ohm
CSD18537NQ5A
CSD18537NQ5A - Power MOSFET, N Channel, 60 V, 50 A, 0.01 ohm, VSON, Surface Mount

SC17013

Power MOSFET, N Channel, 60 V, 50 A, 0.01 ohm, VSON, Surface Mount

TEXAS INSTRUMENTS

• Channel Type : N Channel • Drain Source Voltage Vds : 60V • Continuous Drain Current Id : 50A • Drain Source On State Resistance : 0.01ohm

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N Channel 60V 50A 0.01ohm
SPP17N80C3XKSA1
SPP17N80C3XKSA1 - Power MOSFET, N Channel, 800 V, 17 A, 0.25 ohm, TO-220, Through Hole

SC16976

Power MOSFET, N Channel, 800 V, 17 A, 0.25 ohm, TO-220, Through Hole

INFINEON

The SPP17N80C3 is a 800V CoolMOS™ N-channel Power MOSFET features ultra-low gate current. It is designed for high DC bulk voltage and switching applications. • New revolutionary high voltage technology • Extreme dV/dt rated • High peak current capability •...

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N Channel 800V 17A 0.25ohm