Transistors
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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BC847ALT1G
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SC16047 |
Bipolar (BJT) Single Transistor, NPN, 45V, 100mA, 300mW, SOT-23, SMD ONSEMI The BC847ALT1G is a 45V NPN silicon Bipolar Transistor designed for use in linear and switching applications. The device is suitable for lower power surface mount applications, ESD protection, polarity reversal protection, data line protection, inductive l...
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STP6NK60ZFP
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SC16906 |
Power MOSFET, N Channel, 600 V, 6 A, 1.2 ohm, TO-220FP, Through Hole STMICROELECTRONICS The STP6NK60ZFP is a 600V N-channel Zener-protected Power MOSFET developed using SuperMESH™ technology, achieved through optimization of well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care i...
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N Channel | 600V | 6A | 1.2ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMBTA06-7-F
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SC16080 |
Bipolar (BJT) Single Transistor, NPN, 80V, 500mA, 300mW, SOT-23, SMD DIODES INC. The MMBTA06-7-F is a NPN small signal Bipolar Transistor offers 500mA continuous collector current and 80V collector-base voltage. It is ideal for low power amplification and switching. • UL94V-0 Flammability rating • Epitaxial planar die construction • MM...
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IRLML0100TRPBF
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SC16769 |
Power MOSFET, N Channel, 100 V, 1.6 A, 0.178 ohm, SOT-23, Surface Mount INFINEON The IRLML0100TRPBF is a N-channel HEXFET® Power MOSFET for load/system switch. • Industry Standard Pinout • MSL1, Industrial Qualification • Multi-vendor Compatibility • Environmentally-friendly • Surface Mount
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N Channel | 100V | 1.6A | 0.178ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BC817-40W,115
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SC16024 |
Bipolar (BJT) Single Transistor, NPN, 45V, 500mA, 200mW, SOT-323, SMD NEXPERIA The BC817 series 500mA NPN General Purpose Transistor suitable for use with general purpose switching and amplification. • High current • Low voltage • BC807 PNP complement
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IPT007N06NATMA1
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SC16792 |
Power MOSFET, N Channel, 60 V, 300 A, 660 µohm, HSOF, Surface Mount INFINEON The IPT007N06N is a N-channel Power MOSFET optimized for high current applications. This new package is a perfect solution for high power applications where highest efficiency, outstanding EMI behaviour as well as best thermal behaviour and space reduction...
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N Channel | 60V | 300A | 660µohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSP170PH6327XTSA1
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SC16865 |
SMD P Channel Power MOSFET, 60V, 1.9A, 0.239 Ohm, SOT-223 INFINEON • Enhancement mode • Avalanche rated • dv /dt rated • Pb-free lead plating; RoHS compliant • Qualified according to AEC Q101 • Halogenfree according to IEC61249221
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P Channel | 60V | 1.9A | 0.239ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSS138K
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SC16726 |
Power MOSFET, N Channel, 50 V, 220 mA, 1.6 ohm, SOT-23, Surface Mount ONSEMI The BSS138K is a N-channel logic level enhancement mode Field Effect Transistor features low input capacitance, low-on resistance, low gate threshold voltage and fast switching speed. • Low input/output leakage • ±12V Gate-source voltage • Green product
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N Channel | 50V | 220mA | 1.6ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N7002DW
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SC15983 |
Dual MOSFET, N Channel, 60V, 115mA, 1.6 Ohm, SOT-363, SMD ONSEMI The 2N7002DW is an N-channel Enhancement Mode Field Effect Transistor features low on-resistance, low gate threshold voltage, low input capacitance, fast switching speed and low input/output leakage.
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N Channel | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSS138P,215
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SC16002 |
Power MOSFET, N Channel, 60V, 360mA, 0.9 Ohm, SOT-23, SMD NEXPERIA The BSS138P is a N-channel enhancement mode Field-Effect Transistor (FET) in a Surface Mounted Device (SMD) plastic package using Trench MOSFET technology. • Very Fast Switching • ESD Protection Upto 1.5kV • Logic Level Compatible • AEC-Q101 Qualified
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N Channel | 60V | 360mA | 1.6ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF7343TRPBF
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SC16808 |
Dual MOSFET, Complementary N and P Channel, 55V, 4.7A, 0.043 Ohm, SOIC, SMD INFINEON The IRF7343TRPBF is a dual N/P-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device. The HEXFET Power MOSFET is extre...
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Complementary N and P Channel | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BCV62B,215
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SC16131 |
Bipolar Transistor Array, Dual PNP, 30V, -100mA, 250mW, 220hFE, SOT-143B NEXPERIA The BCV62B is a PNP general-purpose double Bipolar Transistor Array in a small surface-mount plastic package. It is designed for applications with working point independent of temperature and current mirrors. • Low current • Low voltage • Matched pairs • B...
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CSD17308Q3
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SC16684 |
SMD Power MOSFET N Channel NexFET Transistor, 30V, 47A TEXAS INSTRUMENTS The CSD17308Q3 is a 30V N-channel NexFET™ Power MOSFET with low thermal resistance and optimized for 5V gate drive. It is been designed to minimize losses in power conversion and optimized for control or synchronous FET applications. Suitable for point of ...
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N Channel | 30V | 47A | 0.0094ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSR16..
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SC16019 |
Bipolar (BJT) Single Transistor, PNP, -60V, -800mA, 350mW, SOT-23, SMD ONSEMI The BSR16 is a PNP Bipolar Transistor designed for use as a general purpose amplifier and switches requiring collector currents up to 500mA. • Sourced from Process 63 • -55 to 150°C Operating junction temperature range
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ZXMP6A13FTA
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SC16729 |
Power MOSFET, P Channel, 60 V, 1.1 A, 0.4 ohm, SOT-23, Surface Mount DIODES INC. The ZXMP6A13FTA is a -60V P-channel enhancement mode MOSFET with matte tin-plated leads. The terminals can solderable as per MIL-STD-202, method 208. This MOSFET utilizes an unique structure that combines the benefits of low on-resistance with fast switchi...
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P Channel | 60V | 1.1A | 0.4ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BUZ11-NR4941
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SC15774 |
Power MOSFET, N Channel, 50V, 30A, 0.03 Ohm, TO-220AB ONSEMI The BUZ11_NR4941 is a 50V N-channel Power MOSFET designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive pow...
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N Channel | 50V | 30A | 0.03ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDS8858CZ
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SC16689 |
SMD Dual MOSFET N and P Channel Transistor, PowerTrench, SOIC, 30V, 8.6A ONSEMI The FDS8858CZ is a 30V Dual N-channel and P-channel PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. The medium voltage power MOSFET is optimized power s...
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Complementary N and P Channel | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSS138AKAR
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SC16003 |
Power MOSFET, N Channel, 60V, 200mA, 2.7 Ohm, SOT-23, SMD NEXPERIA The BSS138AKA is a N-channel enhancement-mode FET in a small surface-mount plastic package using Trench MOSFET technology. The single N-channel Trench MOSFET suitable for relay driver, high-speed line driver, low-side load switch and switching circuit appl...
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N Channel | 60V | 200mA | 2.7ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BU508AW
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SC15766 |
Bipolar (BJT) Single Transistor, NPN, 700V, 8A, 125W, TO-247 STMICROELECTRONICS The BU508AW is a 700V High Voltage NPN Power Transistor for standard definition CRT display. It is manufactured using diffused collector in planar technology adopting new and enhanced high voltage structure for updated performance to the horizontal deflect...
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BC857C
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SC16091 |
Bipolar (BJT) Single Transistor, PNP, -45V, -100mA, 250mW, SOT-23, SMD MULTICOMP PRO The BC857C is a PNP general purpose Bipolar Transistor suitable for switching and amplification applications. • -65 to 150°C Junction temperature range • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view Terms & Conditio...
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BS170F
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SC16817 |
SMD N CHannel Power MOSFET, 60V, 150mA, 5 Ohm, SOT 23 DIODES INC. • Automotive grade AEC-Q101 qualified • Drain to source Voltage (Vds) of 60V • Gate to source voltage (Vgs) of ±20 • Continuous drain current (Id) 0.15mA to 25°C • Power dissipation (pd) of 330mW • Operating temperature range -55°C to 150°C • Low on state...
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N Channel | 60V | 150mA | 5ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC856BW
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SC16102 |
Bipolar (BJT) Single Transistor, PNP, -65V, -100mA, 200mW, SOT-323, SMD DIODES INC. The BC856BW is a PNP small signal Bipolar Transistor ideally suitable for automatic insertion, switching and AF amplifier applications. • UL94V-0 Flammability rating • BC846AW - BC848CW Complementary NPN types • Halogen-free, Green device • -65 to 150°C Op...
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SI7489DP-T1-GE3
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SC16825 |
Power MOSFET, P Channel, 100 V, 28 A, 0.033 ohm, PowerPAK SO, Surface Mount VISHAY The SI7489DP-T1-GE3 is a -100V P-channel TrenchFET® Power MOSFET. The P-channel MOSFET for switching applications are now available with die on resistances around 1mΩ and with the capability to handle 85A. • Halogen-free according to IEC 61249-2-21 definit...
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P Channel | 100V | 28A | 0.033ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFP460BPBF
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SC16928 |
N Channel Power MOSFET, 500V, 20A, 0.2 Ohm, TO-247AC VISHAY • Suitable applications: displays for LCD or plasma TVs, server & telecom power supplies, industrial equipment such as welding, induction heating and motor drives
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N Channel | 500V | 20A | 0.2ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSS214NWH6327XTSA1
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SC16812 |
Power MOSFET, N Channel, 20 V, 1.5 A, 0.106 ohm, SOT-323, Surface Mount INFINEON • N-channel OptiMOS™2 small signal transistor • Enhancement mode • Super logic level (2.5V rated) • Avalanche rated • Qualified according to AEC Q101
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N Channel | 20V | 1.5A | 0.106ohm |