Transistors
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Channel Type | Drain Source Voltage Vds | Continuous Drain Current Id | Drain Source On State Resistance | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STP80NF10
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SC16882 |
Power MOSFET, N Channel, 100 V, 80 A, 0.012 ohm, TO-220, Through Hole STMICROELECTRONICS The STP80NF10 is a 100V N-channel STripFETâ„¢ II Power MOSFET realized with unique STripFET process. It has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isola...
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N Channel | 100V | 80A | 0.012ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FDN339AN
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SC16732 |
Power MOSFET, N Channel, 20 V, 3 A, 0.035 ohm, SOT-23, Surface Mount ONSEMI The FDN339AN is a 20V N-channel 2.5V Specified PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. The latest medium voltage power MOSFET is optimized power...
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N Channel | 20V | 3A | 0.035ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BC857CLT1G
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SC16076 |
Bipolar (BJT) Single Transistor, PNP, -45V, -100mA, 225mW, SOT-23 ONSEMI The BC857CLT1G is a PNP general purpose Bipolar Transistor is designed for use in linear and switching applications. The device is housed in the package which is designed for lower power surface-mount applications. • AEC-Q101 qualified and PPAP capable
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SI7461DP-T1-GE3
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SC16794 |
Power MOSFET, P Channel, 60 V, 8.6 A, 0.0115 ohm, PowerPAK SO, Surface Mount VISHAY The SI7461DP-T1-GE3 is a -60V P-channel TrenchFET® Power MOSFET. Low thermal resistance PowerPAK® package with small size and low 1.07mm profile. Used in active clamp in intermediate DC/DC power supplies. • Halogen-free according to IEC 61249-2-21 definiti...
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P Channel | 60V | 8.6A | 0.0115ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BC547B
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SC15747 |
Bipolar (BJT) Single Transistor, NPN, 45V, 100mA, 625mW, TO-92 MULTICOMP PRO The BC547B is a NPN Transistor, suitable for use in driver and output stages of audio amplifier, low noise input stages of tape recorders, Hi-Fi amplifiers and signal processing circuits of television receivers. • 250°C/W Junction to Ambient Thermal Resist...
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BSS83PH6327XTSA1
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SC16766 |
Power MOSFET, P Channel, 60 V, 330 mA, 1.4 ohm, SOT-23, Surface Mount INFINEON The BSS83P H6327 is an OptiMOS™ P-channel Power MOSFET consistently meets the highest quality and performance demands in key specifications for power system design such as ON-state resistance and figure of merit characteristics. • Enhancement-mode • Avalan...
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P Channel | 60V | 330mA | 1.4ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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J176-D74Z
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SC15913 |
JFET Transistor, 30V, -2mA, -25mA, 4V, TO-92 ONSEMI The J176_D74Z is a P-channel JFET Switch primarily designed for low level analogue switching, sample and holds circuits, chopper stabilized amplifiers. • 30V Drain-gate voltage • -30V Gate-source voltage • 50mA Forward gate current
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P Channel | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC847BW,115
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SC16041 |
Bipolar (BJT) Single Transistor, General Purpose, NPN, 45V, 100mA, 200mW, SOT-323, SMD NEXPERIA The BC847BW,115 is a NPN general-purpose Transistor in surface mounted device (SMD) plastic package with 3 leads. Designed for switching and amplification applications. • Three different gain selections
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TSM2314CX RFG
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SC16741 |
Power MOSFET, N Channel, 20 V, 4.9 A, 0.027 ohm, SOT-23, Surface Mount TAIWAN SEMICONDUCTOR The TSM2314CX is a N-channel MOSFET with advanced Trench process technology and ±12V gate source voltage. • High Density Cell Design for Ultra Low On-resistance
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N Channel | 20V | 4.9A | 0.027ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DMG2305UX-7
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SC16903 |
Power MOSFET, P Channel, 20 V, 4.2 A, 0.052 ohm, SOT-23, Surface Mount DIODES INC. This MOSFET is designed to minimise the on-state resistance, yet maintain superior switching performance, making it ideal for high efficiency power management applications. • Suitable for backlighting, power management functions, DC/DC converters and motor...
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P Channel | 20V | 4.2A | 0.052ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFBE30PBF
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SC16997 |
Power MOSFET, N Channel, 800 V, 4.1 A, 3 ohm, TO-220AB, Through Hole VISHAY The IRFBE30PBF is a 800V N-channel Power MOSFET, third generation HEXFET® power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is universally preferred for all commercia...
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N Channel | 800V | 4.1A | 3ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STP5NK80ZFP
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SC16947 |
Power MOSFET, N Channel, 800 V, 4.3 A, 1.9 ohm, TO-220FP, Through Hole STMICROELECTRONICS The STP5NK80ZFP is a 800V N-channel Zener-protected Power MOSFET developed using SuperMESHâ„¢ technology, achieved through optimization of well established strip-based PowerMESHâ„¢ layout. In addition to pushing on-resistance significantly down, special care i...
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N Channel | 800V | 4.3A | 1.9ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFML8244TRPBF
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SC16788 |
Power MOSFET, N Channel, 25 V, 5.8 A, 0.02 ohm, SOT-23, Surface Mount INFINEON The IRFML8244TRPBF is a N-channel HEXFET® Power MOSFET with lower switch losses and increased reliability. Compatible with existing surface mount techniques. • Industry-standard pinout • MSL1, Consumer qualification • Lower switching losses • Environment-f...
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N Channel | 25V | 5.8A | 0.02ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SUP53P06-20-E3
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SC16987 |
Power MOSFET, P Channel, 60 V, 53 A, 0.0195 ohm, TO-220AB, Through Hole VISHAY The SUP53P06-20-E3 is a -60V P-channel TrenchFET® Power MOSFET. • 100% UIS Tested
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P Channel | 60V | 53A | 0.0195ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF3205PBF
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SC16899 |
Power MOSFET, N Channel, 55 V, 110 A, 0.008 ohm, TO-220AB, Through Hole INFINEON The IRF3205PBF is a HEXFET® N-channel Power MOSFET with extremely low on-resistance per silicon area and fast switching performance. Advanced HEXFET® power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon ar...
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N Channel | 55V | 110A | 0.008ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ULN2004A
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SC16584 |
7 Darlington Array Transistor, NPN, 50V, 500mA, DIP16 STMICROELECTRONICS High-voltage, high-current darlington arrays each contains seven open collector darlington pairs with common emitters. Suitable for relay drivers, stepper and DC brushed motor drivers, lamp drivers, display drivers (LED and gas discharge), line drivers and...
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MMBT3904WT1G
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SC16072 |
Bipolar (BJT) Single Transistor, NPN, 40V, 200mA, 150mW, SOT-323, SMD ONSEMI The MMBT3904WT1G is a NPN Bipolar Transistor designed for general purpose amplifier applications. It is housed in the package which is designed for low power surface-mount applications. • Low RDS (ON) provides higher efficiency and extends battery life • A...
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SI2308BDS-T1-GE3
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SC16728 |
Power MOSFET, N Channel, 60 V, 2.3 A, 0.13 ohm, TO-236, Surface Mount VISHAY The SI2308BDS-T1-GE3 is a N-channel TrenchFET® Power MOSFET with 175°C operating temperature. • 100% Rg Tested • 100% UIS Tested • ±20V Gate-source voltage
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N Channel | 60V | 2.3A | 0.13ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FMMT458TA
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SC15931 |
Bipolar (BJT) Single Transistor, NPN, 400V, 225mA, 500mW, SOT-23, SMD DIODES INC.
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SI2318CDS-T1-GE3
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SC16746 |
Power MOSFET, N Channel, 40 V, 3.9 A, 0.036 ohm, TO-236, Surface Mount VISHAY • N-channel 40V (D-S) TrenchFET® power MOSFET • 100% Rg tested • Used in DC/DC converters, load switch
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N Channel | 40V | 3.9A | 0.036ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SIS412DN-T1-GE3
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SC16901 |
Power MOSFET, N Channel, 30 V, 12 A, 0.02 ohm, PowerPAK 1212, Surface Mount VISHAY The SIS412DN-T1-GE3 is a 30V N-channel TrenchFET® Power MOSFET. Suitable for load switches, notebook PCs, desktop PCs and game station applications. The N-channel MOSFET for switching applications are now available with die on resistances around 1mΩ and wi...
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N Channel | 30V | 12A | 0.02ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FQT7N10LTF
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SC16853 |
Power MOSFET, N Channel, 100 V, 1.7 A, 0.275 ohm, SOT-223, Surface Mount ONSEMI The FQT7N10LTF is a N-channel enhancement-mode Power MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalan...
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N Channel | 100V | 1.7A | 0.275ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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VP2106N3-G
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SC15966 |
Power MOSFET, P Channel, 60V, 250mA, 9 Ohm, TO-92 MICROCHIP • Channel Type : P Channel • Drain Source Voltage Vds : 60V • Continuous Drain Current Id : 250mA • Drain Source On State Resistance : 9ohm
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P Channel | 60V | 250mA | 9ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMBT5551LT1G
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SC16063 |
Bipolar Single Transistor, BJT, General Purpose, NPN, 160V, 600mA, 225mW, SOT-23, SMD ONSEMI The MMBT5551LT1G is an NPN Silicon High Voltage Transistor designed for requiring unique site and control change requirements. This transistor is PPAP capable and AEC-Q101 qualified. • Halogen-free
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KSP2222ABU
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SC15796 |
Bipolar (BJT) Single Transistor, NPN, 40V, 600mA, 625mW, TO-92 ONSEMI The KSP2222ABU is a NPN Bipolar Transistor offers 75V collector base voltage and 600mA collector current. It is suitable for general purpose amplifier applications.
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