Transistors

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STP80NF10
STP80NF10 - Power MOSFET, N Channel, 100 V, 80 A, 0.012 ohm, TO-220, Through Hole

SC16882

Power MOSFET, N Channel, 100 V, 80 A, 0.012 ohm, TO-220, Through Hole

STMICROELECTRONICS

The STP80NF10 is a 100V N-channel STripFETâ„¢ II Power MOSFET realized with unique STripFET process. It has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isola...

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N Channel 100V 80A 0.012ohm
FDN339AN
FDN339AN - Power MOSFET, N Channel, 20 V, 3 A, 0.035 ohm, SOT-23, Surface Mount

SC16732

Power MOSFET, N Channel, 20 V, 3 A, 0.035 ohm, SOT-23, Surface Mount

ONSEMI

The FDN339AN is a 20V N-channel 2.5V Specified PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. The latest medium voltage power MOSFET is optimized power...

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N Channel 20V 3A 0.035ohm
BC857CLT1G
BC857CLT1G - Bipolar (BJT) Single Transistor, PNP, -45V, -100mA, 225mW, SOT-23

SC16076

Bipolar (BJT) Single Transistor, PNP, -45V, -100mA, 225mW, SOT-23

ONSEMI

The BC857CLT1G is a PNP general purpose Bipolar Transistor is designed for use in linear and switching applications. The device is housed in the package which is designed for lower power surface-mount applications. • AEC-Q101 qualified and PPAP capable

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SI7461DP-T1-GE3
SI7461DP-T1-GE3 - Power MOSFET, P Channel, 60 V, 8.6 A, 0.0115 ohm, PowerPAK SO, Surface Mount

SC16794

Power MOSFET, P Channel, 60 V, 8.6 A, 0.0115 ohm, PowerPAK SO, Surface Mount

VISHAY

The SI7461DP-T1-GE3 is a -60V P-channel TrenchFET® Power MOSFET. Low thermal resistance PowerPAK® package with small size and low 1.07mm profile. Used in active clamp in intermediate DC/DC power supplies. • Halogen-free according to IEC 61249-2-21 definiti...

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P Channel 60V 8.6A 0.0115ohm
BC547B
BC547B - Bipolar (BJT) Single Transistor, NPN, 45V, 100mA, 625mW, TO-92

SC15747

Bipolar (BJT) Single Transistor, NPN, 45V, 100mA, 625mW, TO-92

MULTICOMP PRO

The BC547B is a NPN Transistor, suitable for use in driver and output stages of audio amplifier, low noise input stages of tape recorders, Hi-Fi amplifiers and signal processing circuits of television receivers. • 250°C/W Junction to Ambient Thermal Resist...

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BSS83PH6327XTSA1
BSS83PH6327XTSA1 - Power MOSFET, P Channel, 60 V, 330 mA, 1.4 ohm, SOT-23, Surface Mount

SC16766

Power MOSFET, P Channel, 60 V, 330 mA, 1.4 ohm, SOT-23, Surface Mount

INFINEON

The BSS83P H6327 is an OptiMOS™ P-channel Power MOSFET consistently meets the highest quality and performance demands in key specifications for power system design such as ON-state resistance and figure of merit characteristics. • Enhancement-mode • Avalan...

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P Channel 60V 330mA 1.4ohm
J176-D74Z
J176-D74Z - JFET Transistor, 30V, -2mA, -25mA, 4V, TO-92

SC15913

JFET Transistor, 30V, -2mA, -25mA, 4V, TO-92

ONSEMI

The J176_D74Z is a P-channel JFET Switch primarily designed for low level analogue switching, sample and holds circuits, chopper stabilized amplifiers. • 30V Drain-gate voltage • -30V Gate-source voltage • 50mA Forward gate current

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P Channel - - -
BC847BW,115
BC847BW,115 - Bipolar (BJT) Single Transistor, General Purpose, NPN, 45V, 100mA, 200mW, SOT-323, SMD

SC16041

Bipolar (BJT) Single Transistor, General Purpose, NPN, 45V, 100mA, 200mW, SOT-323, SMD

NEXPERIA

The BC847BW,115 is a NPN general-purpose Transistor in surface mounted device (SMD) plastic package with 3 leads. Designed for switching and amplification applications. • Three different gain selections

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TSM2314CX RFG
TSM2314CX RFG - Power MOSFET, N Channel, 20 V, 4.9 A, 0.027 ohm, SOT-23, Surface Mount

SC16741

Power MOSFET, N Channel, 20 V, 4.9 A, 0.027 ohm, SOT-23, Surface Mount

TAIWAN SEMICONDUCTOR

The TSM2314CX is a N-channel MOSFET with advanced Trench process technology and ±12V gate source voltage. • High Density Cell Design for Ultra Low On-resistance

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N Channel 20V 4.9A 0.027ohm
DMG2305UX-7
DMG2305UX-7 - Power MOSFET, P Channel, 20 V, 4.2 A, 0.052 ohm, SOT-23, Surface Mount

SC16903

Power MOSFET, P Channel, 20 V, 4.2 A, 0.052 ohm, SOT-23, Surface Mount

DIODES INC.

This MOSFET is designed to minimise the on-state resistance, yet maintain superior switching performance, making it ideal for high efficiency power management applications. • Suitable for backlighting, power management functions, DC/DC converters and motor...

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P Channel 20V 4.2A 0.052ohm
IRFBE30PBF
IRFBE30PBF - Power MOSFET, N Channel, 800 V, 4.1 A, 3 ohm, TO-220AB, Through Hole

SC16997

Power MOSFET, N Channel, 800 V, 4.1 A, 3 ohm, TO-220AB, Through Hole

VISHAY

The IRFBE30PBF is a 800V N-channel Power MOSFET, third generation HEXFET® power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is universally preferred for all commercia...

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N Channel 800V 4.1A 3ohm
STP5NK80ZFP
STP5NK80ZFP - Power MOSFET, N Channel, 800 V, 4.3 A, 1.9 ohm, TO-220FP, Through Hole

SC16947

Power MOSFET, N Channel, 800 V, 4.3 A, 1.9 ohm, TO-220FP, Through Hole

STMICROELECTRONICS

The STP5NK80ZFP is a 800V N-channel Zener-protected Power MOSFET developed using SuperMESHâ„¢ technology, achieved through optimization of well established strip-based PowerMESHâ„¢ layout. In addition to pushing on-resistance significantly down, special care i...

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N Channel 800V 4.3A 1.9ohm
IRFML8244TRPBF
IRFML8244TRPBF - Power MOSFET, N Channel, 25 V, 5.8 A, 0.02 ohm, SOT-23, Surface Mount

SC16788

Power MOSFET, N Channel, 25 V, 5.8 A, 0.02 ohm, SOT-23, Surface Mount

INFINEON

The IRFML8244TRPBF is a N-channel HEXFET® Power MOSFET with lower switch losses and increased reliability. Compatible with existing surface mount techniques. • Industry-standard pinout • MSL1, Consumer qualification • Lower switching losses • Environment-f...

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N Channel 25V 5.8A 0.02ohm
SUP53P06-20-E3
SUP53P06-20-E3 - Power MOSFET, P Channel, 60 V, 53 A, 0.0195 ohm, TO-220AB, Through Hole

SC16987

Power MOSFET, P Channel, 60 V, 53 A, 0.0195 ohm, TO-220AB, Through Hole

VISHAY

The SUP53P06-20-E3 is a -60V P-channel TrenchFET® Power MOSFET. • 100% UIS Tested

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P Channel 60V 53A 0.0195ohm
IRF3205PBF
IRF3205PBF - Power MOSFET, N Channel, 55 V, 110 A, 0.008 ohm, TO-220AB, Through Hole

SC16899

Power MOSFET, N Channel, 55 V, 110 A, 0.008 ohm, TO-220AB, Through Hole

INFINEON

The IRF3205PBF is a HEXFET® N-channel Power MOSFET with extremely low on-resistance per silicon area and fast switching performance. Advanced HEXFET® power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon ar...

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N Channel 55V 110A 0.008ohm
ULN2004A
ULN2004A - 7 Darlington Array Transistor, NPN, 50V, 500mA,  DIP16

SC16584

7 Darlington Array Transistor, NPN, 50V, 500mA, DIP16

STMICROELECTRONICS

High-voltage, high-current darlington arrays each contains seven open collector darlington pairs with common emitters. Suitable for relay drivers, stepper and DC brushed motor drivers, lamp drivers, display drivers (LED and gas discharge), line drivers and...

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MMBT3904WT1G
MMBT3904WT1G - Bipolar (BJT) Single Transistor, NPN, 40V, 200mA, 150mW, SOT-323, SMD

SC16072

Bipolar (BJT) Single Transistor, NPN, 40V, 200mA, 150mW, SOT-323, SMD

ONSEMI

The MMBT3904WT1G is a NPN Bipolar Transistor designed for general purpose amplifier applications. It is housed in the package which is designed for low power surface-mount applications. • Low RDS (ON) provides higher efficiency and extends battery life • A...

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SI2308BDS-T1-GE3
SI2308BDS-T1-GE3 - Power MOSFET, N Channel, 60 V, 2.3 A, 0.13 ohm, TO-236, Surface Mount

SC16728

Power MOSFET, N Channel, 60 V, 2.3 A, 0.13 ohm, TO-236, Surface Mount

VISHAY

The SI2308BDS-T1-GE3 is a N-channel TrenchFET® Power MOSFET with 175°C operating temperature. • 100% Rg Tested • 100% UIS Tested • ±20V Gate-source voltage

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N Channel 60V 2.3A 0.13ohm
FMMT458TA
FMMT458TA - Bipolar (BJT) Single Transistor, NPN, 400V, 225mA, 500mW, SOT-23, SMD

SC15931

Bipolar (BJT) Single Transistor, NPN, 400V, 225mA, 500mW, SOT-23, SMD

DIODES INC.

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SI2318CDS-T1-GE3
SI2318CDS-T1-GE3 - Power MOSFET, N Channel, 40 V, 3.9 A, 0.036 ohm, TO-236, Surface Mount

SC16746

Power MOSFET, N Channel, 40 V, 3.9 A, 0.036 ohm, TO-236, Surface Mount

VISHAY

• N-channel 40V (D-S) TrenchFET® power MOSFET • 100% Rg tested • Used in DC/DC converters, load switch

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N Channel 40V 3.9A 0.036ohm
SIS412DN-T1-GE3
SIS412DN-T1-GE3 - Power MOSFET, N Channel, 30 V, 12 A, 0.02 ohm, PowerPAK 1212, Surface Mount

SC16901

Power MOSFET, N Channel, 30 V, 12 A, 0.02 ohm, PowerPAK 1212, Surface Mount

VISHAY

The SIS412DN-T1-GE3 is a 30V N-channel TrenchFET® Power MOSFET. Suitable for load switches, notebook PCs, desktop PCs and game station applications. The N-channel MOSFET for switching applications are now available with die on resistances around 1mΩ and wi...

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N Channel 30V 12A 0.02ohm
FQT7N10LTF
FQT7N10LTF - Power MOSFET, N Channel, 100 V, 1.7 A, 0.275 ohm, SOT-223, Surface Mount

SC16853

Power MOSFET, N Channel, 100 V, 1.7 A, 0.275 ohm, SOT-223, Surface Mount

ONSEMI

The FQT7N10LTF is a N-channel enhancement-mode Power MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalan...

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N Channel 100V 1.7A 0.275ohm
VP2106N3-G
VP2106N3-G - Power MOSFET, P Channel, 60V, 250mA, 9 Ohm, TO-92

SC15966

Power MOSFET, P Channel, 60V, 250mA, 9 Ohm, TO-92

MICROCHIP

• Channel Type : P Channel • Drain Source Voltage Vds : 60V • Continuous Drain Current Id : 250mA • Drain Source On State Resistance : 9ohm

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P Channel 60V 250mA 9ohm
MMBT5551LT1G
MMBT5551LT1G - Bipolar Single Transistor, BJT, General Purpose, NPN, 160V, 600mA, 225mW, SOT-23, SMD

SC16063

Bipolar Single Transistor, BJT, General Purpose, NPN, 160V, 600mA, 225mW, SOT-23, SMD

ONSEMI

The MMBT5551LT1G is an NPN Silicon High Voltage Transistor designed for requiring unique site and control change requirements. This transistor is PPAP capable and AEC-Q101 qualified. • Halogen-free

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KSP2222ABU
KSP2222ABU - Bipolar (BJT) Single Transistor, NPN, 40V, 600mA, 625mW, TO-92

SC15796

Bipolar (BJT) Single Transistor, NPN, 40V, 600mA, 625mW, TO-92

ONSEMI

The KSP2222ABU is a NPN Bipolar Transistor offers 75V collector base voltage and 600mA collector current. It is suitable for general purpose amplifier applications.

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