Transistors

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NTD2955T4G
NTD2955T4G - Power MOSFET, P Channel, 60 V, 12 A, 0.155 ohm, TO-252 (DPAK), Surface Mount

SC16860

Power MOSFET, P Channel, 60 V, 12 A, 0.155 ohm, TO-252 (DPAK), Surface Mount

ONSEMI

The NTD2955T4G is a -60V P-channel Power MOSFET designed to withstand high energy in the avalanche and commutation modes. It is designed for low voltage, high speed switching applications in power supplies, converters and power motor controls. This device ...

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P Channel 60V 12A 0.155ohm
BUTW92
BUTW92 - Bipolar (BJT) Single Transistor, NPN, 250V, 180W, 60A, 9hFE

SC15729

Bipolar (BJT) Single Transistor, NPN, 250V, 180W, 60A, 9hFE

STMICROELECTRONICS

The BUTW92 is a 250V High Current NPN Silicon Transistor suited for power conversion applications, high efficiency converters and motor controls. Fast switching times and very low saturation voltage resulting in reduced switching and conduction losses. • H...

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STP4NK60ZFP
STP4NK60ZFP - Power MOSFET, N Channel, 600 V, 4 A, 2 ohm, TO-220FP, Through Hole

SC16986

Power MOSFET, N Channel, 600 V, 4 A, 2 ohm, TO-220FP, Through Hole

STMICROELECTRONICS

The STP4NK60ZFP is a 600V N-channel Zener-protected Power MOSFET developed using SuperMESH™ technology, achieved through optimization of well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care i...

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N Channel 600V 4A 2ohm
IRFR9120NTRPBF
IRFR9120NTRPBF - Power MOSFET, P Channel, 100 V, 6.6 A, 0.48 ohm, TO-252 (DPAK), Surface Mount

SC16875

Power MOSFET, P Channel, 100 V, 6.6 A, 0.48 ohm, TO-252 (DPAK), Surface Mount

INFINEON

The IRFR9120NTRPBF is a HEXFET® fifth generation single P-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design...

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P Channel 100V 6.6A 0.48ohm
BC141-16
BC141-16 - Bipolar Transistor, NPN, 60V, 1A, TO-39

SC15378

Bipolar Transistor, NPN, 60V, 1A, TO-39

MULTICOMP PRO

The BC141-16 from Multicomp Pro are through hole, NPN medium power, silicon planar epitaxial transistors in TO-39 metal can package. This device is used for switching and amplification. • Collector emitter voltage (Vce) of 60V • Continuous collector curren...

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FJPF5021OTU
FJPF5021OTU - Bipolar (BJT) Single Transistor, NPN, 500V, 5A, 40W, TO-220F

SC15806

Bipolar (BJT) Single Transistor, NPN, 500V, 5A, 40W, TO-220F

ONSEMI

• NPN silicon transistor • High voltage and high reliability • High speed switching • Wide SOA

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IRFBG20PBF
IRFBG20PBF - Power MOSFET, N Channel, 1 kV, 1.3 A, 11.5 ohm, TO-220AB, Through Hole

SC16930

Power MOSFET, N Channel, 1 kV, 1.3 A, 11.5 ohm, TO-220AB, Through Hole

VISHAY

The IRFBG20PBF is a 1000V N-channel enhancement-mode Power MOSFET with single configuration. This third generation Power MOSFET from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low ON-resistance. The ...

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N Channel 1kV 1.3A 11.5ohm
IRLB3034PBF
IRLB3034PBF - Power MOSFET, N Channel, 40 V, 195 A, 0.0014 ohm, TO-220AB, Through Hole

SC16937

Power MOSFET, N Channel, 40 V, 195 A, 0.0014 ohm, TO-220AB, Through Hole

INFINEON

The IRLB3034PBF is 40V single N channel HEXFET power MOSFET in TO-220AB package. This MOSFET features improved gate, avalanche and dynamic dV/dt ruggedness, fast switching. Applicable at high efficiency synchronous rectification in SMPS, uninterruptible po...

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N Channel 40V 195A 0.0014ohm
STP11NM60FD
STP11NM60FD - N Channel Power MOSFET, 600V, 11A, 0.4 Ohm, TO-220AB

SC16952

N Channel Power MOSFET, 600V, 11A, 0.4 Ohm, TO-220AB

STMICROELECTRONICS

The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. • 100% avalanche tested • Hi...

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N Channel 600V 11A 0.4ohm
IPW60R017C7XKSA1
IPW60R017C7XKSA1 - Power MOSFET, N Channel, 600 V, 109 A, 0.015 ohm, TO-247, Through Hole

SC17026

Power MOSFET, N Channel, 600 V, 109 A, 0.015 ohm, TO-247, Through Hole

INFINEON

600V CoolMOS™ C7 power transistor, a revolutionary technology for high voltage power MOSFETs. Designed according to the superjunction (SJ) principle suitable for use in PFC stages and PWM stages (TTF, LLC) for high power/performance SMPS e.g. computing, se...

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N Channel 600V 109A 0.015ohm
2N7002ET1G
2N7002ET1G - Power MOSFET, N Channel, 60V, 310mA, 0.86 Ohm, SOT-23, SMD

SC15987

Power MOSFET, N Channel, 60V, 310mA, 0.86 Ohm, SOT-23, SMD

ONSEMI

The 2N7002ET1G is a N-channel small signal MOSFET in Trench technology and low drain to source voltage. Suitable for low side load switch and level shift circuits. • 1.2A Pulsed drain current • ±20V Gate-source voltage • Halogen-free

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N Channel 60V 310mA 0.86ohm
BC856B
BC856B - Bipolar (BJT) Single Transistor, PNP, -65V, -100mA, 250mW, SOT-23, SMD

SC16089

Bipolar (BJT) Single Transistor, PNP, -65V, -100mA, 250mW, SOT-23, SMD

MULTICOMP PRO

The BC856B is a PNP general purpose Bipolar Transistor suitable for switching and amplification applications. • -65 to 150°C Junction temperature range • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view Terms & Conditio...

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BC848ALT1G
BC848ALT1G - Bipolar (BJT) Single Transistor, NPN, 30V, 100mA, 225mW, SOT-23, SMD

SC16058

Bipolar (BJT) Single Transistor, NPN, 30V, 100mA, 225mW, SOT-23, SMD

ONSEMI

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IRFBG30PBF
IRFBG30PBF - Power MOSFET, N Channel, 1 kV, 3.1 A, 5 ohm, TO-220AB, Through Hole

SC16974

Power MOSFET, N Channel, 1 kV, 3.1 A, 5 ohm, TO-220AB, Through Hole

VISHAY

The IRFBG30PBF is a third generation N-channel Power MOSFET is designed with the combination of fast switching, low on-resistance and cost effectiveness. • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Dr...

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N Channel 1kV 3.1A 5ohm
TIP31CG
TIP31CG - Bipolar (BJT) Single Transistor, NPN, 100V, 3A, 40W, TO-220

SC15737

Bipolar (BJT) Single Transistor, NPN, 100V, 3A, 40W, TO-220

ONSEMI

The TIP31CG is a 100V Silicon NPN Bipolar Complementary Plastic Power Transistor designed for use in general purpose amplifier and switching applications. • High current gain bandwidth • Collector-base voltage (Vcbo = 100V) • Emitter-base voltage (Vcbo = 5...

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BC847,215
BC847,215 - Bipolar (BJT) Single Transistor, NPN, 45V, 100mA, 250mW, SOT-23, SMD

SC16017

Bipolar (BJT) Single Transistor, NPN, 45V, 100mA, 250mW, SOT-23, SMD

NEXPERIA

The BC847,215 is a NPN general purpose Transistor in SMD plastic package. • Three Different Gain Selections

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STP6NK90Z
STP6NK90Z - Power MOSFET, N Channel, 900V, 5.8A, 2 Ohm, TO-220

SC15822

Power MOSFET, N Channel, 900V, 5.8A, 2 Ohm, TO-220

STMICROELECTRONICS

The STP6NK90Z is a 900V N-channel Zener-protected SuperMESH™ Power MOSFET developed using SuperMESH™ technology, achieved through optimization of well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, speci...

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N Channel 900V 5.8A 2ohm
MMBT5087LT1G
MMBT5087LT1G - Bipolar (BJT) Single Transistor, PNP, -50V, -50mA, 225mW, SOT-23, SMD

SC16088

Bipolar (BJT) Single Transistor, PNP, -50V, -50mA, 225mW, SOT-23, SMD

ONSEMI

The MMBT5087LT1G is a PNP Bipolar Transistor designed for high gain and low noise general purpose amplifier applications. The device is housed in the package which is designed for lower power surface-mount applications. • Low RDS (ON) provides higher effic...

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2N7002K-T1-GE3
2N7002K-T1-GE3 - Power MOSFET, N Channel, 60 V, 190 mA, 2 ohm, SOT-23, Surface Mount

SC16724

Power MOSFET, N Channel, 60 V, 190 mA, 2 ohm, SOT-23, Surface Mount

VISHAY

The 2N7002K-T1-GE3 is a TrenchFET® N-channel enhancement-mode Power MOSFET offers low Input and output leakage. • 2Ω Low ON-resistance • 2V Low threshold • 25pF Low input capacitance • 25ns Fast switching speed • 2000V ESD Protection • Halogen-free • Low o...

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N Channel 60V 190mA 2ohm
D45H11G
D45H11G - Bipolar (BJT) Single Transistor, Audio, PNP, -80V, -10A, 70W, TO-220

SC15819

Bipolar (BJT) Single Transistor, Audio, PNP, -80V, -10A, 70W, TO-220

ONSEMI

The D45H11G is a -80V Silicon PNP Bipolar Complementary Plastic Power Transistor that can be used as general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplif...

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FDPF18N50
FDPF18N50 - Power MOSFET, N Channel, 500 V, 18 A, 0.22 ohm, TO-220F, Through Hole

SC16953

Power MOSFET, N Channel, 500 V, 18 A, 0.22 ohm, TO-220F, Through Hole

ONSEMI

The FDPF18N50 is an UniFET™ high voltage MOSFET produced based on planar stripe and DMOS technology. It is tailored to reduce ON-state resistance and to provide better switching performance and higher avalanche energy strength. This device family is suitab...

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N Channel 500V 18A 0.22ohm
ULN2003A
ULN2003A - Darlington Array 7 NPN, 2003, DIP16

SC16583

Darlington Array 7 NPN, 2003, DIP16

STMICROELECTRONICS

ULN2003A is a high-voltage, high-current darlington array containing seven open collector darlington pairs with common emitters. Each channel is rated at 500mA and can withstand peak currents of 600mA. Suppression diodes are included for inductive load dri...

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IRLML0030TRPBF
IRLML0030TRPBF - Power MOSFET, N Channel, 30 V, 5.3 A, 0.022 ohm, SOT-23, Surface Mount

SC16720

Power MOSFET, N Channel, 30 V, 5.3 A, 0.022 ohm, SOT-23, Surface Mount

INFINEON

The IRLML0030TRPBF is a N-channel HEXFET® Power MOSFET with lower switch losses and increased reliability. Compatible with existing surface mount techniques. • Industry-standard pinout • MSL1, Consumer qualification • Multi-vendor compatibility • Environme...

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N Channel 30V 5.3A 0.022ohm
PMV37ENEAR
PMV37ENEAR - SMD N Channel Power MOSFET, 60V, 3.5A, 0.037 Ohm, TO-236AB

SC16985

SMD N Channel Power MOSFET, 60V, 3.5A, 0.037 Ohm, TO-236AB

NEXPERIA

The PMV37ENEAR from NEXPERIA is a N Channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device plastic package using Trench MOSFET technology. • Suitable for relay driver, high speed line driver, low-side load...

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N Channel 60V 3.5A 0.037ohm
IRFBE30PBF
IRFBE30PBF - Power MOSFET, N Channel, 800 V, 4.1 A, 3 ohm, TO-220AB, Through Hole

SC16997

Power MOSFET, N Channel, 800 V, 4.1 A, 3 ohm, TO-220AB, Through Hole

VISHAY

The IRFBE30PBF is a 800V N-channel Power MOSFET, third generation HEXFET® power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is universally preferred for all commercia...

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N Channel 800V 4.1A 3ohm