Transistors
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Channel Type | Drain Source Voltage Vds | Continuous Drain Current Id | Drain Source On State Resistance | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NTD2955T4G
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SC16860 |
Power MOSFET, P Channel, 60 V, 12 A, 0.155 ohm, TO-252 (DPAK), Surface Mount ONSEMI The NTD2955T4G is a -60V P-channel Power MOSFET designed to withstand high energy in the avalanche and commutation modes. It is designed for low voltage, high speed switching applications in power supplies, converters and power motor controls. This device ...
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P Channel | 60V | 12A | 0.155ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BUTW92
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SC15729 |
Bipolar (BJT) Single Transistor, NPN, 250V, 180W, 60A, 9hFE STMICROELECTRONICS The BUTW92 is a 250V High Current NPN Silicon Transistor suited for power conversion applications, high efficiency converters and motor controls. Fast switching times and very low saturation voltage resulting in reduced switching and conduction losses. • H...
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STP4NK60ZFP
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SC16986 |
Power MOSFET, N Channel, 600 V, 4 A, 2 ohm, TO-220FP, Through Hole STMICROELECTRONICS The STP4NK60ZFP is a 600V N-channel Zener-protected Power MOSFET developed using SuperMESH™ technology, achieved through optimization of well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care i...
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N Channel | 600V | 4A | 2ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFR9120NTRPBF
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SC16875 |
Power MOSFET, P Channel, 100 V, 6.6 A, 0.48 ohm, TO-252 (DPAK), Surface Mount INFINEON The IRFR9120NTRPBF is a HEXFET® fifth generation single P-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design...
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P Channel | 100V | 6.6A | 0.48ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BC141-16
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SC15378 |
Bipolar Transistor, NPN, 60V, 1A, TO-39 MULTICOMP PRO The BC141-16 from Multicomp Pro are through hole, NPN medium power, silicon planar epitaxial transistors in TO-39 metal can package. This device is used for switching and amplification. • Collector emitter voltage (Vce) of 60V • Continuous collector curren...
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FJPF5021OTU
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SC15806 |
Bipolar (BJT) Single Transistor, NPN, 500V, 5A, 40W, TO-220F ONSEMI • NPN silicon transistor • High voltage and high reliability • High speed switching • Wide SOA
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IRFBG20PBF
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SC16930 |
Power MOSFET, N Channel, 1 kV, 1.3 A, 11.5 ohm, TO-220AB, Through Hole VISHAY The IRFBG20PBF is a 1000V N-channel enhancement-mode Power MOSFET with single configuration. This third generation Power MOSFET from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low ON-resistance. The ...
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N Channel | 1kV | 1.3A | 11.5ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRLB3034PBF
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SC16937 |
Power MOSFET, N Channel, 40 V, 195 A, 0.0014 ohm, TO-220AB, Through Hole INFINEON The IRLB3034PBF is 40V single N channel HEXFET power MOSFET in TO-220AB package. This MOSFET features improved gate, avalanche and dynamic dV/dt ruggedness, fast switching. Applicable at high efficiency synchronous rectification in SMPS, uninterruptible po...
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N Channel | 40V | 195A | 0.0014ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STP11NM60FD
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SC16952 |
N Channel Power MOSFET, 600V, 11A, 0.4 Ohm, TO-220AB STMICROELECTRONICS The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. • 100% avalanche tested • Hi...
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N Channel | 600V | 11A | 0.4ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IPW60R017C7XKSA1
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SC17026 |
Power MOSFET, N Channel, 600 V, 109 A, 0.015 ohm, TO-247, Through Hole INFINEON 600V CoolMOS™ C7 power transistor, a revolutionary technology for high voltage power MOSFETs. Designed according to the superjunction (SJ) principle suitable for use in PFC stages and PWM stages (TTF, LLC) for high power/performance SMPS e.g. computing, se...
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N Channel | 600V | 109A | 0.015ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N7002ET1G
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SC15987 |
Power MOSFET, N Channel, 60V, 310mA, 0.86 Ohm, SOT-23, SMD ONSEMI The 2N7002ET1G is a N-channel small signal MOSFET in Trench technology and low drain to source voltage. Suitable for low side load switch and level shift circuits. • 1.2A Pulsed drain current • ±20V Gate-source voltage • Halogen-free
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N Channel | 60V | 310mA | 0.86ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC856B
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SC16089 |
Bipolar (BJT) Single Transistor, PNP, -65V, -100mA, 250mW, SOT-23, SMD MULTICOMP PRO The BC856B is a PNP general purpose Bipolar Transistor suitable for switching and amplification applications. • -65 to 150°C Junction temperature range • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view Terms & Conditio...
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BC848ALT1G
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SC16058 |
Bipolar (BJT) Single Transistor, NPN, 30V, 100mA, 225mW, SOT-23, SMD ONSEMI
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IRFBG30PBF
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SC16974 |
Power MOSFET, N Channel, 1 kV, 3.1 A, 5 ohm, TO-220AB, Through Hole VISHAY The IRFBG30PBF is a third generation N-channel Power MOSFET is designed with the combination of fast switching, low on-resistance and cost effectiveness. • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Dr...
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N Channel | 1kV | 3.1A | 5ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TIP31CG
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SC15737 |
Bipolar (BJT) Single Transistor, NPN, 100V, 3A, 40W, TO-220 ONSEMI The TIP31CG is a 100V Silicon NPN Bipolar Complementary Plastic Power Transistor designed for use in general purpose amplifier and switching applications. • High current gain bandwidth • Collector-base voltage (Vcbo = 100V) • Emitter-base voltage (Vcbo = 5...
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BC847,215
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SC16017 |
Bipolar (BJT) Single Transistor, NPN, 45V, 100mA, 250mW, SOT-23, SMD NEXPERIA The BC847,215 is a NPN general purpose Transistor in SMD plastic package. • Three Different Gain Selections
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STP6NK90Z
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SC15822 |
Power MOSFET, N Channel, 900V, 5.8A, 2 Ohm, TO-220 STMICROELECTRONICS The STP6NK90Z is a 900V N-channel Zener-protected SuperMESH™ Power MOSFET developed using SuperMESH™ technology, achieved through optimization of well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, speci...
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N Channel | 900V | 5.8A | 2ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMBT5087LT1G
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SC16088 |
Bipolar (BJT) Single Transistor, PNP, -50V, -50mA, 225mW, SOT-23, SMD ONSEMI The MMBT5087LT1G is a PNP Bipolar Transistor designed for high gain and low noise general purpose amplifier applications. The device is housed in the package which is designed for lower power surface-mount applications. • Low RDS (ON) provides higher effic...
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2N7002K-T1-GE3
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SC16724 |
Power MOSFET, N Channel, 60 V, 190 mA, 2 ohm, SOT-23, Surface Mount VISHAY The 2N7002K-T1-GE3 is a TrenchFET® N-channel enhancement-mode Power MOSFET offers low Input and output leakage. • 2Ω Low ON-resistance • 2V Low threshold • 25pF Low input capacitance • 25ns Fast switching speed • 2000V ESD Protection • Halogen-free • Low o...
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N Channel | 60V | 190mA | 2ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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D45H11G
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SC15819 |
Bipolar (BJT) Single Transistor, Audio, PNP, -80V, -10A, 70W, TO-220 ONSEMI The D45H11G is a -80V Silicon PNP Bipolar Complementary Plastic Power Transistor that can be used as general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplif...
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FDPF18N50
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SC16953 |
Power MOSFET, N Channel, 500 V, 18 A, 0.22 ohm, TO-220F, Through Hole ONSEMI The FDPF18N50 is an UniFET™ high voltage MOSFET produced based on planar stripe and DMOS technology. It is tailored to reduce ON-state resistance and to provide better switching performance and higher avalanche energy strength. This device family is suitab...
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N Channel | 500V | 18A | 0.22ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ULN2003A
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SC16583 |
Darlington Array 7 NPN, 2003, DIP16 STMICROELECTRONICS ULN2003A is a high-voltage, high-current darlington array containing seven open collector darlington pairs with common emitters. Each channel is rated at 500mA and can withstand peak currents of 600mA. Suppression diodes are included for inductive load dri...
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IRLML0030TRPBF
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SC16720 |
Power MOSFET, N Channel, 30 V, 5.3 A, 0.022 ohm, SOT-23, Surface Mount INFINEON The IRLML0030TRPBF is a N-channel HEXFET® Power MOSFET with lower switch losses and increased reliability. Compatible with existing surface mount techniques. • Industry-standard pinout • MSL1, Consumer qualification • Multi-vendor compatibility • Environme...
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N Channel | 30V | 5.3A | 0.022ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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PMV37ENEAR
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SC16985 |
SMD N Channel Power MOSFET, 60V, 3.5A, 0.037 Ohm, TO-236AB NEXPERIA The PMV37ENEAR from NEXPERIA is a N Channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device plastic package using Trench MOSFET technology. • Suitable for relay driver, high speed line driver, low-side load...
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N Channel | 60V | 3.5A | 0.037ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFBE30PBF
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SC16997 |
Power MOSFET, N Channel, 800 V, 4.1 A, 3 ohm, TO-220AB, Through Hole VISHAY The IRFBE30PBF is a 800V N-channel Power MOSFET, third generation HEXFET® power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is universally preferred for all commercia...
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N Channel | 800V | 4.1A | 3ohm |