Transistors

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Channel Type Drain Source Voltage Vds Continuous Drain Current Id Drain Source On State Resistance
 
 
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MMBT3904WT1G
MMBT3904WT1G - Bipolar (BJT) Single Transistor, NPN, 40V, 200mA, 150mW, SOT-323, SMD

SC16072

Bipolar (BJT) Single Transistor, NPN, 40V, 200mA, 150mW, SOT-323, SMD

ONSEMI

The MMBT3904WT1G is a NPN Bipolar Transistor designed for general purpose amplifier applications. It is housed in the package which is designed for low power surface-mount applications. • Low RDS (ON) provides higher efficiency and extends battery life • A...

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IRF3205PBF
IRF3205PBF - Power MOSFET, N Channel, 55 V, 110 A, 0.008 ohm, TO-220AB, Through Hole

SC16899

Power MOSFET, N Channel, 55 V, 110 A, 0.008 ohm, TO-220AB, Through Hole

INFINEON

The IRF3205PBF is a HEXFET® N-channel Power MOSFET with extremely low on-resistance per silicon area and fast switching performance. Advanced HEXFET® power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon ar...

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N Channel 55V 110A 0.008ohm
STP5NK80ZFP
STP5NK80ZFP - Power MOSFET, N Channel, 800 V, 4.3 A, 1.9 ohm, TO-220FP, Through Hole

SC16947

Power MOSFET, N Channel, 800 V, 4.3 A, 1.9 ohm, TO-220FP, Through Hole

STMICROELECTRONICS

The STP5NK80ZFP is a 800V N-channel Zener-protected Power MOSFET developed using SuperMESH™ technology, achieved through optimization of well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care i...

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N Channel 800V 4.3A 1.9ohm
SUP53P06-20-E3
SUP53P06-20-E3 - Power MOSFET, P Channel, 60 V, 53 A, 0.0195 ohm, TO-220AB, Through Hole

SC16987

Power MOSFET, P Channel, 60 V, 53 A, 0.0195 ohm, TO-220AB, Through Hole

VISHAY

The SUP53P06-20-E3 is a -60V P-channel TrenchFET® Power MOSFET. • 100% UIS Tested

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P Channel 60V 53A 0.0195ohm
ULN2004A
ULN2004A - 7 Darlington Array Transistor, NPN, 50V, 500mA,  DIP16

SC16584

7 Darlington Array Transistor, NPN, 50V, 500mA, DIP16

STMICROELECTRONICS

High-voltage, high-current darlington arrays each contains seven open collector darlington pairs with common emitters. Suitable for relay drivers, stepper and DC brushed motor drivers, lamp drivers, display drivers (LED and gas discharge), line drivers and...

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IRFML8244TRPBF
IRFML8244TRPBF - Power MOSFET, N Channel, 25 V, 5.8 A, 0.02 ohm, SOT-23, Surface Mount

SC16788

Power MOSFET, N Channel, 25 V, 5.8 A, 0.02 ohm, SOT-23, Surface Mount

INFINEON

The IRFML8244TRPBF is a N-channel HEXFET® Power MOSFET with lower switch losses and increased reliability. Compatible with existing surface mount techniques. • Industry-standard pinout • MSL1, Consumer qualification • Lower switching losses • Environment-f...

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N Channel 25V 5.8A 0.02ohm
BC807
BC807 - Bipolar (BJT) Single Transistor, PNP, -45V, -500mA, 300mW, SOT-23, SMD

SC16110

Bipolar (BJT) Single Transistor, PNP, -45V, -500mA, 300mW, SOT-23, SMD

MULTICOMP PRO

The BC807 is a PNP Bipolar Transistor designed for general purpose amplifier applications. It has low collector-emitter saturation voltage. • High collector current • High current gain • -65 to 150°C Junction temperature range • Multicomp Pro products are ...

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2N7002NXAKR
2N7002NXAKR - Power MOSFET, Trench, N Channel, 60V, 190mA, 3 Ohm, TO-236AB, SMD

SC15954

Power MOSFET, Trench, N Channel, 60V, 190mA, 3 Ohm, TO-236AB, SMD

NEXPERIA

• Channel Type : N Channel • Drain Source Voltage Vds : 60V • Continuous Drain Current Id : 190mA • Drain Source On State Resistance : 3ohm

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N Channel 60V 190mA 3ohm
MMBTA42LT1G
MMBTA42LT1G - Bipolar (BJT) Single Transistor, NPN, 300V, 500mA, 225mW, SOT-23, SMD

SC16052

Bipolar (BJT) Single Transistor, NPN, 300V, 500mA, 225mW, SOT-23, SMD

ONSEMI

The MMBTA42LT1G is a 300V NPN silicon high voltage Bipolar Transistor designed for general purpose amplifier applications. The device is suitable for lower power surface mount applications. • Halogen-free/BFR-free • AEC-Q101 qualified and PPAP capable • 30...

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STN3NF06L
STN3NF06L - Power MOSFET, N Channel, 60 V, 4 A, 0.07 ohm, SOT-223, Surface Mount

SC16819

Power MOSFET, N Channel, 60 V, 4 A, 0.07 ohm, SOT-223, Surface Mount

STMICROELECTRONICS

• 60V, 4A N-channel STripFET™ II power MOSFET in a 4 pin SOT-223 package • Exceptional dv/dt capability • 100% avalanche tested • Low threshold drive • Suitable for switching applications • Specifically designed to minimize input capacitance and gate char...

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N Channel 60V 4A 0.07ohm
SQ2318AES-T1_GE3
SQ2318AES-T1_GE3 - SMD Automotive N-Channel MOSFET Transistor, SOT-23, 40V, 8A

SC16702

SMD Automotive N-Channel MOSFET Transistor, SOT-23, 40V, 8A

VISHAY

• TrenchFET® Power MOSFET • AEC-Q101 Qualified • 100% Rg and UIS Tested

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N Channel 40V 8A 0.125ohm
BC818-40LT1G
BC818-40LT1G - Bipolar (BJT) Single Transistor, NPN, 25V, 500mA, 225mW, SOT-23, SMD

SC16100

Bipolar (BJT) Single Transistor, NPN, 25V, 500mA, 225mW, SOT-23, SMD

ONSEMI

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PZT2222AT1G
PZT2222AT1G - Bipolar (BJT) Single Transistor, NPN, 40V, 600mA, 1.5W, SOT-223, SMD

SC16082

Bipolar (BJT) Single Transistor, NPN, 40V, 600mA, 1.5W, SOT-223, SMD

ONSEMI

The PZT2222AT1G is an NPN Silicon Planar Epitaxial Transistor designed for use in linear and switching and medium power surface mount applications. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die. T...

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BSS138BK,215
BSS138BK,215 - Power MOSFET, N Channel, 60V, 360mA, 1 Ohm, SOT-23, SMD

SC15993

Power MOSFET, N Channel, 60V, 360mA, 1 Ohm, SOT-23, SMD

NEXPERIA

The BSS138BK is a N-channel enhancement mode Field-Effect Transistor (FET) in a Surface Mounted Device (SMD) plastic package using Trench MOSFET technology. • Logic Level Compatible • Very Fast Switching • ESD Protection Upto 1.5kV • AEC-Q101 Qualified

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N Channel 60V 360mA 1ohm
MMBT2907ALT1G
MMBT2907ALT1G - Bipolar (BJT) Single Transistor, PNP, -60V, -600mA, 225mW, SOT-23

SC16036

Bipolar (BJT) Single Transistor, PNP, -60V, -600mA, 225mW, SOT-23

ONSEMI

The MMBT2907ALT1G is a -60V PNP silicon Bipolar Transistor designed for use in linear and switching applications. The device is suitable for lower power surface mount applications. • Halogen-free/BFR-free • -60VDC Collector to base voltage (VCBO) • -5VDC E...

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BC856BLT1G
BC856BLT1G - Bipolar (BJT) Single Transistor, PNP, -65V, -100mA, 225mW, SOT-23

SC16084

Bipolar (BJT) Single Transistor, PNP, -65V, -100mA, 225mW, SOT-23

ONSEMI

The BC856BLT1G is a PNP general purpose Bipolar Transistor designed for use in linear and switching applications. The device is housed in the package which is designed for lower power surface-mount applications. • AEC-Q101 qualified and PPAP capable

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PZT2907AT1G
PZT2907AT1G - Bipolar (BJT) Single Transistor, PNP, 60V, -600mA, 1.5W, SOT-223, SMD

SC16096

Bipolar (BJT) Single Transistor, PNP, 60V, -600mA, 1.5W, SOT-223, SMD

ONSEMI

The PZT2907AT1G is a bipolar PNP Transistor designed for use as a general purpose amplifier and in switching applications. The device is housed in the package which is designed for medium power surface-mount applications. The package ensures level mounting...

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BC847BS-7-F
BC847BS-7-F - Bipolar Transistor Array, Dual, NPN, 45V, 100mA, 200mW, 200hFE, SOT-363

SC16137

Bipolar Transistor Array, Dual, NPN, 45V, 100mA, 200mW, 200hFE, SOT-363

DIODES INC.

BC847BS-7-F is a dual NPN transistor for switching and AF amplifier application. • Ultra-small surface mount package • Power dissipation is 200mW at TA = +25°C • Collector-base breakdown voltage is 50V min at IC = 100µA, IB = 0, TA = +25°C • Collector-emit...

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MRF101AN
MRF101AN - RF FET Transistor, 133V, 182W, 1.8MHz, 250MHz, TO-220

SC15952

RF FET Transistor, 133V, 182W, 1.8MHz, 250MHz, TO-220

NXP

These devices are designed for use in VHF/UHF communications, VHF TV broadcast and aerospace applications as well as industrial, scientific and medical applications. The devices are exceptionally rugged and exhibit high performance up to 250 MHz. • Mirror ...

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N Channel 133V - -
SI2323CDS-T1-GE3
SI2323CDS-T1-GE3 - Power MOSFET, P Channel, 20 V, 6 A, 0.032 ohm, SOT-23, Surface Mount

SC16846

Power MOSFET, P Channel, 20 V, 6 A, 0.032 ohm, SOT-23, Surface Mount

VISHAY

The SI2323CDS-T1-GE3 is a 20VDS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for load switch, PA switch and DC-to-DC converter applications. • 100% Rg tested • -55 to 150°C Operating temperature range • Halogen-free

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P Channel 20V 6A 0.032ohm
MPSA42
MPSA42 - Bipolar (BJT) Single Transistor, NPN, 300V, 500mA, 625mW, TO-92

SC15748

Bipolar (BJT) Single Transistor, NPN, 300V, 500mA, 625mW, TO-92

MULTICOMP PRO

The MPSA42 is a NPN epitaxial planar Silicon Transistor with 160V minimum breakdown voltage. It is used for applications requiring relatively low collector current, such as lamp drivers and neon tubes. • Complementary high voltage transistor • -55 to 150°C...

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2N7000BU
2N7000BU - Power MOSFET, N Channel, 60 V, 200 mA, 5 ohm, TO-226AA, Through Hole

SC16840

Power MOSFET, N Channel, 60 V, 200 mA, 5 ohm, TO-226AA, Through Hole

ONSEMI

The 2N7000BU is an advanced small-signal N-channel enhancement-mode MOSFET produced using high cell density DMOS technology. It minimizes ON-state resistance while providing rugged, reliable and fast switching performance. It can be used in most applicatio...

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N Channel 60V 200mA 5ohm
STP3N150
STP3N150 - Power MOSFET, N Channel, 1.5 kV, 2.5 A, 6 ohm, TO-220, Through Hole

SC16950

Power MOSFET, N Channel, 1.5 kV, 2.5 A, 6 ohm, TO-220, Through Hole

STMICROELECTRONICS

The STP3N150 is a PowerMESH™ N-channel Power MOSFET features minimized intrinsic capacitances and Qg. This Power MOSFET designed using the company's consolidated strip layout-based MESH OVERLAY™ process. The result is a product that matches or improves on ...

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N Channel 1.5kV 2.5A 6ohm
STP10NK60ZFP
STP10NK60ZFP - Power MOSFET, N Channel, 600 V, 10 A, 0.65 ohm, TO-220FP, Through Hole

SC17005

Power MOSFET, N Channel, 600 V, 10 A, 0.65 ohm, TO-220FP, Through Hole

STMICROELECTRONICS

The STP10NK60ZFP is a 600V N-channel Zener-protected Power MOSFET developed using SuperMESH™ technology, achieved through optimization of well established strip-based PowerMESH™ layout. In addition to a significant reduction in on resistance, this MOSFET i...

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N Channel 600V 10A 0.65ohm
BSP250,115
BSP250,115 - Power MOSFET, P Channel, 30 V, 1 A, 0.25 ohm, SOT-223, Surface Mount

SC16760

Power MOSFET, P Channel, 30 V, 1 A, 0.25 ohm, SOT-223, Surface Mount

NEXPERIA

The BSP250,115 is a -30V P-channel Enhancement Mode vertical D-MOS Transistor with high speed switching and low on resistance makes this device suitable for use in low loss motor, actuator drivers and power switching applications. • 150°C Junction temperat...

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P Channel 30V 1A 0.25ohm