Transistors
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Channel Type | Drain Source Voltage Vds | Continuous Drain Current Id | Drain Source On State Resistance | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STP10NK60ZFP
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SC17005 |
Power MOSFET, N Channel, 600 V, 10 A, 0.65 ohm, TO-220FP, Through Hole STMICROELECTRONICS The STP10NK60ZFP is a 600V N-channel Zener-protected Power MOSFET developed using SuperMESH™ technology, achieved through optimization of well established strip-based PowerMESH™ layout. In addition to a significant reduction in on resistance, this MOSFET i...
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N Channel | 600V | 10A | 0.65ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSP250,115
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SC16760 |
Power MOSFET, P Channel, 30 V, 1 A, 0.25 ohm, SOT-223, Surface Mount NEXPERIA The BSP250,115 is a -30V P-channel Enhancement Mode vertical D-MOS Transistor with high speed switching and low on resistance makes this device suitable for use in low loss motor, actuator drivers and power switching applications. • 150°C Junction temperat...
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P Channel | 30V | 1A | 0.25ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NTR4101PT1G
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SC16827 |
Power MOSFET, P Channel, 20 V, 3.2 A, 0.07 ohm, SOT-23, Surface Mount ONSEMI The NTR4101PT1G is a P-channel Trench Power MOSFET offers -20V drain source voltage and -2.4A continuous drain current. It is suitable for charging circuits and battery protection, load management for portables and computing applications. • Leading -20V Tr...
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P Channel | 20V | 3.2A | 0.07ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSS123LT1G
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SC16745 |
SMD N Channel Power MOSFET, 100V, 170mA, 6 Ohm, SOT 23 ONSEMI • AEC-Q101 Qualified • PPAP capable
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N Channel | 100V | 170mA | 6ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SUD50P04-08-GE3
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SC16743 |
Power MOSFET, P Channel, 40 V, 50 A, 0.0067 ohm, TO-252 (DPAK), Surface Mount VISHAY The SUD50P04-08-GE3 from Vishay is a surface mount, 40V P channel TrenchFET power MOSFET in TO-252 package. This device is used as power switch, DC to DC converters and load switch in high current applications. • Drain to source voltage (Vds) of -40V • Gat...
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P Channel | 40V | 50A | 0.0067ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FZT951
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SC16107 |
Bipolar (BJT) Single Transistor, PNP, 60V, -5A, 3W, SOT-223, SMD DIODES INC. The FZT951 is a PNP medium Power Transistor with matte tin-plated terminals, UL94V-0-flame rated moulded plastic case, solderable terminals as per MIL-STD-202, method 208 standard. • Complement to FZT851 • Level-1 per J-STD-020 moisture sensitivity • Green...
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FDS9926A
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SC16805 |
Dual MOSFET, N Channel, 20V, 6.5A, 0.025 Ohm, SOIC, Surface Mount ONSEMI The FDS9926A is a 20V Dual N-channel 2.5V Specified PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. The medium voltage power MOSFET is optimized power s...
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N Channel | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRLB4030PBF
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SC16936 |
Power MOSFET, N Channel, 100 V, 110 A, 0.0034 ohm, TO-220AB, Through Hole INFINEON The IRLB4030PBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for DC motor drive, high efficiency synchronous rectification in SMPS,...
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N Channel | 100V | 110A | 0.0034ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFB4115PBF
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SC16837 |
Power MOSFET, N Channel, 150 V, 104 A, 0.0093 ohm, TO-220AB, Through Hole INFINEON The IRFB4115PBF is a 150V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high efficiency synchronous rectification in SMPS, uninterruptible...
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1+ €2.7729 (€3.41) 10+ €2.1645 (€2.66) 100+ €1.8486 (€2.27) |
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N Channel | 150V | 104A | 0.0093ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC546BTA
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SC15772 |
Bipolar (BJT) Single Transistor, Small Signal, NPN, 65V, 100mA, 500mW, TO-92 ONSEMI The BC546BTA is a 65V NPN Epitaxial Silicon Transistor used as switching and amplifier. This product is general usage and suitable for many different applications. It is complement to BC556, BC557, BC558, BC559 and BC560 switching and amplifier. • High vol...
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VNP20N07-E
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SC15832 |
Power MOSFET, N Channel, 80V, 10A, 0.05 ohm, TO-220 STMICROELECTRONICS The VNP20N07-E is a 70V Fully Auto Protected Power MOSFET made using VIPower technology intended for replacement of standard power MOSFETS in DC to 50KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the c...
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N Channel | 80V | 10A | 0.05ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N3773G
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SC15818 |
Bipolar (BJT) Single Transistor, NPN, 140V, 16A, 150W, TO-204AA ONSEMI The 2N3773G is a 140V NPN PowerBase™ Bipolar Power Transistor designed for high power audio, disk head positioners and other linear applications. This device can also be used in power switching circuits such as relay or solenoid drivers, DC-DC converters o...
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2SK3557-6-TB-E
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SC15909 |
JFET Transistor, -15V, 10mA, 20mA, -1.5V, SOT-23, JFET ONSEMI • Channel Type : N Channel
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N Channel | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC847CW,115
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SC16086 |
Bipolar (BJT) Single Transistor, NPN, 45V, 100mA, 200mW, SOT-323, SMD NEXPERIA The BC847CW,115 is a NPN general purpose Transistor with 3 leads, plastic surface mount package. Designed for switching and amplification applications. • Three different gain selections
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BSP318SH6327XTSA1
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SC16992 |
Power MOSFET, N Channel, 60 V, 2.6 A, 0.07 ohm, SOT-223, Surface Mount INFINEON • 60V, 2.6A SIPMOS® N-channel small signal transistor in 4 pin SOT-223 package • Enhancement mode • Avalanche rated • Logic level • dv/dt rated • Qualified according to AEC-Q101
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N Channel | 60V | 2.6A | 0.07ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC557BTA
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SC15808 |
Bipolar (BJT) Single Transistor, PNP, -45V, -100mA, 500mW, TO-92 ONSEMI The BC557BTA is a PNP epitaxial silicon Bipolar Transistor suitable for switching and amplifier applications. • Complement to BC547
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BSS123L
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SC16764 |
Power MOSFET, N Channel, 100 V, 170 mA, 2.98 ohm, SOT-23, Surface Mount ONSEMI The BSS123L is produced using high cell density trench MOSFET technology. This minimizes on-state resistance while providing rugged, reliable and fast switching performance. The BSS123L is particularly suited for low voltage, low current applications such ...
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N Channel | 100V | 170mA | 2.98ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSS316NH6327XTSA1
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SC16768 |
Power MOSFET, N Channel, 30 V, 1.4 A, 0.119 ohm, SOT-23, Surface Mount INFINEON The BSS316N H6327 is an OptiMOS™2 N-channel logic level enhancement mode Small Signal Transistor, logic level (4.5V rated) and avalanche rated. • ±20V Gate-source voltage • 260°C Soldering temperature • AEC-Q101 Qualified • Halogen-free
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N Channel | 30V | 1.4A | 0.119ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI2309CDS-T1-GE3
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SC16750 |
Power MOSFET, P Channel, 60 V, 1.6 A, 0.285 ohm, SOT-23, Surface Mount VISHAY The SI2309CDS-T1-GE3 is a P-Channel 60V Power MOSFET with ±20V gate source voltage. It works on TrenchFET® power MOSFET technology. • Halogen-free
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P Channel | 60V | 1.6A | 0.285ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC846
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SC16117 |
Bipolar (BJT) Single Transistor, NPN, 65V, 100mA, 250mW, SOT-23, SMD MULTICOMP PRO The BC846 is a NPN general purpose Bipolar Transistor housed in a surface-mount plastic package. It is used in AF input stages and driver applications, suitable for switching and amplification applications. • Two different gain selections • High current ga...
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BC140-16
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SC15377 |
Bipolar Transistor, NPN, 40V, 1A, TO-39 MULTICOMP PRO The BC140-16 is a NPN medium Power Transistor, designed for use in power amplifier and switching applications. • 80V Collector base voltage • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view Terms & Conditions for detai...
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2N3904BU
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SC15757 |
Bipolar (BJT) Single Transistor, NPN, 40V, 200mA, 625mW, TO-92 ONSEMI The 2N3904BU is a NPN Transistor for general purpose amplifier and switch. The useful dynamic range extends to 100mA as a switch and to 100MHz as an amplifier. • 200°C/W Thermal Resistance, Junction-to-Ambient
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DMP3056L-7
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SC15968 |
Power MOSFET, P Channel, 30V, 4.3A, 0.035 Ohm, SOT-23, SMD DIODES INC. DMP3056L-7 is a P-channel enhancement mode MOSFET. This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. • ...
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P Channel | 30V | 4.3A | 0.05ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SQJ459EP-T1_GE3
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SC16852 |
Power MOSFET, P Channel, 60 V, 52 A, 0.0155 ohm, PowerPAK SO, Surface Mount VISHAY New AEC-Q101 automotive MOSFETs ffrom Vishay are manufactured on a dedicated process flow to instill ruggedness. Rated for a maximum junction temperature of 175 °C, the Vishay Siliconix AEC-Q101 qualified SQ series features low on-resistance n- and p-chann...
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P Channel | 60V | 52A | 0.0155ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FMMT593
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SC16061 |
Bipolar (BJT) Single Transistor, PNP, 100V, 1A, 500mW, SOT-23, SMD DIODES INC. The FMMT593 is a PNP silicon planar high voltage Bipolar Transistor offers -120V collector-base voltage and -1A continuous collector current. • FMMT493 Complementary NPN type • -55 to 150°C Operating temperature range
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