Transistors

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STP10NK60ZFP
STP10NK60ZFP - Power MOSFET, N Channel, 600 V, 10 A, 0.65 ohm, TO-220FP, Through Hole

SC17005

Power MOSFET, N Channel, 600 V, 10 A, 0.65 ohm, TO-220FP, Through Hole

STMICROELECTRONICS

The STP10NK60ZFP is a 600V N-channel Zener-protected Power MOSFET developed using SuperMESH™ technology, achieved through optimization of well established strip-based PowerMESH™ layout. In addition to a significant reduction in on resistance, this MOSFET i...

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N Channel 600V 10A 0.65ohm
BSP250,115
BSP250,115 - Power MOSFET, P Channel, 30 V, 1 A, 0.25 ohm, SOT-223, Surface Mount

SC16760

Power MOSFET, P Channel, 30 V, 1 A, 0.25 ohm, SOT-223, Surface Mount

NEXPERIA

The BSP250,115 is a -30V P-channel Enhancement Mode vertical D-MOS Transistor with high speed switching and low on resistance makes this device suitable for use in low loss motor, actuator drivers and power switching applications. • 150°C Junction temperat...

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P Channel 30V 1A 0.25ohm
NTR4101PT1G
NTR4101PT1G - Power MOSFET, P Channel, 20 V, 3.2 A, 0.07 ohm, SOT-23, Surface Mount

SC16827

Power MOSFET, P Channel, 20 V, 3.2 A, 0.07 ohm, SOT-23, Surface Mount

ONSEMI

The NTR4101PT1G is a P-channel Trench Power MOSFET offers -20V drain source voltage and -2.4A continuous drain current. It is suitable for charging circuits and battery protection, load management for portables and computing applications. • Leading -20V Tr...

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P Channel 20V 3.2A 0.07ohm
BSS123LT1G
BSS123LT1G - SMD N Channel Power MOSFET, 100V, 170mA, 6 Ohm, SOT 23

SC16745

SMD N Channel Power MOSFET, 100V, 170mA, 6 Ohm, SOT 23

ONSEMI

• AEC-Q101 Qualified • PPAP capable

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N Channel 100V 170mA 6ohm
SUD50P04-08-GE3
SUD50P04-08-GE3 - Power MOSFET, P Channel, 40 V, 50 A, 0.0067 ohm, TO-252 (DPAK), Surface Mount

SC16743

Power MOSFET, P Channel, 40 V, 50 A, 0.0067 ohm, TO-252 (DPAK), Surface Mount

VISHAY

The SUD50P04-08-GE3 from Vishay is a surface mount, 40V P channel TrenchFET power MOSFET in TO-252 package. This device is used as power switch, DC to DC converters and load switch in high current applications. • Drain to source voltage (Vds) of -40V • Gat...

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P Channel 40V 50A 0.0067ohm
FZT951
FZT951 - Bipolar (BJT) Single Transistor, PNP, 60V, -5A, 3W, SOT-223, SMD

SC16107

Bipolar (BJT) Single Transistor, PNP, 60V, -5A, 3W, SOT-223, SMD

DIODES INC.

The FZT951 is a PNP medium Power Transistor with matte tin-plated terminals, UL94V-0-flame rated moulded plastic case, solderable terminals as per MIL-STD-202, method 208 standard. • Complement to FZT851 • Level-1 per J-STD-020 moisture sensitivity • Green...

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FDS9926A
FDS9926A - Dual MOSFET, N Channel, 20V, 6.5A, 0.025 Ohm, SOIC, Surface Mount

SC16805

Dual MOSFET, N Channel, 20V, 6.5A, 0.025 Ohm, SOIC, Surface Mount

ONSEMI

The FDS9926A is a 20V Dual N-channel 2.5V Specified PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. The medium voltage power MOSFET is optimized power s...

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N Channel - - -
IRLB4030PBF
IRLB4030PBF - Power MOSFET, N Channel, 100 V, 110 A, 0.0034 ohm, TO-220AB, Through Hole

SC16936

Power MOSFET, N Channel, 100 V, 110 A, 0.0034 ohm, TO-220AB, Through Hole

INFINEON

The IRLB4030PBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for DC motor drive, high efficiency synchronous rectification in SMPS,...

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N Channel 100V 110A 0.0034ohm
IRFB4115PBF
IRFB4115PBF - Power MOSFET, N Channel, 150 V, 104 A, 0.0093 ohm, TO-220AB, Through Hole

SC16837

Power MOSFET, N Channel, 150 V, 104 A, 0.0093 ohm, TO-220AB, Through Hole

INFINEON

The IRFB4115PBF is a 150V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high efficiency synchronous rectification in SMPS, uninterruptible...

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N Channel 150V 104A 0.0093ohm
BC546BTA
BC546BTA - Bipolar (BJT) Single Transistor, Small Signal, NPN, 65V, 100mA, 500mW, TO-92

SC15772

Bipolar (BJT) Single Transistor, Small Signal, NPN, 65V, 100mA, 500mW, TO-92

ONSEMI

The BC546BTA is a 65V NPN Epitaxial Silicon Transistor used as switching and amplifier. This product is general usage and suitable for many different applications. It is complement to BC556, BC557, BC558, BC559 and BC560 switching and amplifier. • High vol...

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VNP20N07-E
VNP20N07-E - Power MOSFET, N Channel, 80V, 10A, 0.05 ohm, TO-220

SC15832

Power MOSFET, N Channel, 80V, 10A, 0.05 ohm, TO-220

STMICROELECTRONICS

The VNP20N07-E is a 70V Fully Auto Protected Power MOSFET made using VIPower technology intended for replacement of standard power MOSFETS in DC to 50KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the c...

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N Channel 80V 10A 0.05ohm
2N3773G
2N3773G - Bipolar (BJT) Single Transistor, NPN, 140V, 16A, 150W, TO-204AA

SC15818

Bipolar (BJT) Single Transistor, NPN, 140V, 16A, 150W, TO-204AA

ONSEMI

The 2N3773G is a 140V NPN PowerBase™ Bipolar Power Transistor designed for high power audio, disk head positioners and other linear applications. This device can also be used in power switching circuits such as relay or solenoid drivers, DC-DC converters o...

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2SK3557-6-TB-E
2SK3557-6-TB-E - JFET Transistor, -15V, 10mA, 20mA, -1.5V, SOT-23, JFET

SC15909

JFET Transistor, -15V, 10mA, 20mA, -1.5V, SOT-23, JFET

ONSEMI

• Channel Type : N Channel

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N Channel - - -
BC847CW,115
BC847CW,115 - Bipolar (BJT) Single Transistor, NPN, 45V, 100mA, 200mW, SOT-323, SMD

SC16086

Bipolar (BJT) Single Transistor, NPN, 45V, 100mA, 200mW, SOT-323, SMD

NEXPERIA

The BC847CW,115 is a NPN general purpose Transistor with 3 leads, plastic surface mount package. Designed for switching and amplification applications. • Three different gain selections

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BSP318SH6327XTSA1
BSP318SH6327XTSA1 - Power MOSFET, N Channel, 60 V, 2.6 A, 0.07 ohm, SOT-223, Surface Mount

SC16992

Power MOSFET, N Channel, 60 V, 2.6 A, 0.07 ohm, SOT-223, Surface Mount

INFINEON

• 60V, 2.6A SIPMOS® N-channel small signal transistor in 4 pin SOT-223 package • Enhancement mode • Avalanche rated • Logic level • dv/dt rated • Qualified according to AEC-Q101

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N Channel 60V 2.6A 0.07ohm
BC557BTA
BC557BTA - Bipolar (BJT) Single Transistor, PNP, -45V, -100mA, 500mW, TO-92

SC15808

Bipolar (BJT) Single Transistor, PNP, -45V, -100mA, 500mW, TO-92

ONSEMI

The BC557BTA is a PNP epitaxial silicon Bipolar Transistor suitable for switching and amplifier applications. • Complement to BC547

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BSS123L
BSS123L - Power MOSFET, N Channel, 100 V, 170 mA, 2.98 ohm, SOT-23, Surface Mount

SC16764

Power MOSFET, N Channel, 100 V, 170 mA, 2.98 ohm, SOT-23, Surface Mount

ONSEMI

The BSS123L is produced using high cell density trench MOSFET technology. This minimizes on-state resistance while providing rugged, reliable and fast switching performance. The BSS123L is particularly suited for low voltage, low current applications such ...

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N Channel 100V 170mA 2.98ohm
BSS316NH6327XTSA1
BSS316NH6327XTSA1 - Power MOSFET, N Channel, 30 V, 1.4 A, 0.119 ohm, SOT-23, Surface Mount

SC16768

Power MOSFET, N Channel, 30 V, 1.4 A, 0.119 ohm, SOT-23, Surface Mount

INFINEON

The BSS316N H6327 is an OptiMOS™2 N-channel logic level enhancement mode Small Signal Transistor, logic level (4.5V rated) and avalanche rated. • ±20V Gate-source voltage • 260°C Soldering temperature • AEC-Q101 Qualified • Halogen-free

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N Channel 30V 1.4A 0.119ohm
SI2309CDS-T1-GE3
SI2309CDS-T1-GE3 - Power MOSFET, P Channel, 60 V, 1.6 A, 0.285 ohm, SOT-23, Surface Mount

SC16750

Power MOSFET, P Channel, 60 V, 1.6 A, 0.285 ohm, SOT-23, Surface Mount

VISHAY

The SI2309CDS-T1-GE3 is a P-Channel 60V Power MOSFET with ±20V gate source voltage. It works on TrenchFET® power MOSFET technology. • Halogen-free

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P Channel 60V 1.6A 0.285ohm
BC846
BC846 - Bipolar (BJT) Single Transistor, NPN, 65V, 100mA, 250mW, SOT-23, SMD

SC16117

Bipolar (BJT) Single Transistor, NPN, 65V, 100mA, 250mW, SOT-23, SMD

MULTICOMP PRO

The BC846 is a NPN general purpose Bipolar Transistor housed in a surface-mount plastic package. It is used in AF input stages and driver applications, suitable for switching and amplification applications. • Two different gain selections • High current ga...

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BC140-16
BC140-16 - Bipolar Transistor, NPN, 40V, 1A, TO-39

SC15377

Bipolar Transistor, NPN, 40V, 1A, TO-39

MULTICOMP PRO

The BC140-16 is a NPN medium Power Transistor, designed for use in power amplifier and switching applications. • 80V Collector base voltage • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view Terms & Conditions for detai...

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2N3904BU
2N3904BU - Bipolar (BJT) Single Transistor, NPN, 40V, 200mA, 625mW, TO-92

SC15757

Bipolar (BJT) Single Transistor, NPN, 40V, 200mA, 625mW, TO-92

ONSEMI

The 2N3904BU is a NPN Transistor for general purpose amplifier and switch. The useful dynamic range extends to 100mA as a switch and to 100MHz as an amplifier. • 200°C/W Thermal Resistance, Junction-to-Ambient

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DMP3056L-7
DMP3056L-7 - Power MOSFET, P Channel, 30V, 4.3A, 0.035 Ohm, SOT-23, SMD

SC15968

Power MOSFET, P Channel, 30V, 4.3A, 0.035 Ohm, SOT-23, SMD

DIODES INC.

DMP3056L-7 is a P-channel enhancement mode MOSFET. This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. • ...

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P Channel 30V 4.3A 0.05ohm
SQJ459EP-T1_GE3
SQJ459EP-T1_GE3 - Power MOSFET, P Channel, 60 V, 52 A, 0.0155 ohm, PowerPAK SO, Surface Mount

SC16852

Power MOSFET, P Channel, 60 V, 52 A, 0.0155 ohm, PowerPAK SO, Surface Mount

VISHAY

New AEC-Q101 automotive MOSFETs ffrom Vishay are manufactured on a dedicated process flow to instill ruggedness. Rated for a maximum junction temperature of 175 °C, the Vishay Siliconix AEC-Q101 qualified SQ series features low on-resistance n- and p-chann...

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P Channel 60V 52A 0.0155ohm
FMMT593
FMMT593 - Bipolar (BJT) Single Transistor, PNP, 100V, 1A, 500mW, SOT-23, SMD

SC16061

Bipolar (BJT) Single Transistor, PNP, 100V, 1A, 500mW, SOT-23, SMD

DIODES INC.

The FMMT593 is a PNP silicon planar high voltage Bipolar Transistor offers -120V collector-base voltage and -1A continuous collector current. • FMMT493 Complementary NPN type • -55 to 150°C Operating temperature range

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