Transistors
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| Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Channel Type | Drain Source Voltage Vds | Continuous Drain Current Id | Drain Source On State Resistance | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MP001171
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SC20013 |
NPN Silicon Planar Epitaxial Transistor, BJT, Bipolar, Single, 80V, 1A, 1.8W, TO-18 MULTICOMP PRO The MP001171 is a 80V Silicon NPN Bipolar Transistor designed primarily for amplifier and switching application.
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IRLML2803TRPBF
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SC19133 |
SMD Power MOSFET, N Channel, 30V, 850mA, 0.3 Ohm, SOT-23 INFINEON The IRLML2803PBF is a N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance. Fifth generation HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. ...
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N Channel | 30V | 850mA | 0.3ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N3055
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SC19494 |
Bipolar (BJT) Single Transistor, General Purpose, NPN, 60V, 15A, 115W, TO-3 MULTICOMP PRO
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1+ €3.1824 (€3.91) 10+ €2.2698 (€2.79) 100+ €1.7784 (€2.19) |
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IPD90P04P405ATMA2
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SC20574 |
Power Mosfet Transistor, P Channel, 40V, 90A, TO-252 (DPAK), SMD INFINEON IPD90P04P405ATMA2 is a OptiMOS®-P2 power-transistor in a 3 pin TO-252 package. • Continuous drain current is -90A • Power dissipation is 125W • P-channel - normal level - enhancement mode • AEC qualified • 175°C operating temperature • 100% avalanche teste...
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P Channel | 40V | 90A | 0.0047ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N7002E-7-F
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SC21289 |
Power MOSFET, N Channel, 60 V, 250 mA, 1.6 ohm, SOT-23, Surface Mount DIODES INC. • Channel Type : N Channel • Drain Source Voltage Vds : 60V • Continuous Drain Current Id : 250mA • Drain Source On State Resistance : 1.6ohm
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N Channel | 60V | 250mA | 1.6ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC856BS,115
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SC21409 |
Bipolar Transistor Array, Dual PNP, 65 V, 100 mA NEXPERIA The BC856BS is a 100mA PNP-PNP General Purpose Transistor Pair in a very small surface-mount plastic package. It is suitable for use with general purpose switching and amplification. • Low collector capacitance • Low collector-emitter saturation voltage • ...
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MJE350
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SC21514 |
Bipolar (BJT) Single Transistor, PNP, 300 V, 500 mA, 20.8 W, TO-225AA, Through Hole STMICROELECTRONICS The MJE350 is a -300V Silicon Planar PNP Complementary Power Transistor intended for use in medium power linear and switching applications. Fast switching times and very low saturation voltage resulting in reduced switching and conduction losses. • Complem...
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ZTX690B
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SC21331 |
Bipolar (BJT) Single Transistor, NPN, 45 V, 2 A, 1 W, E-Line, Through Hole DIODES INC. The ZTX690B is a 45V E-Line Silicon NPN Planar Medium Power High Gain Transistor featuring high gain and low saturation voltages. The transistor is ideal for siren drivers and battery powered circuits as well as Darlington replacement applications. • Gain ...
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BCV27,215
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SC21411 |
Darlington Transistor, Dual NPN, 30 V, 250 mW, 500 mA, SOT-23, 3 Pins NEXPERIA
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MMBT5551-7-F
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SC21319 |
Bipolar (BJT) Single Transistor, NPN, 160 V, 600 mA, 300 mW, SOT-23, Surface Mount DIODES INC. The MMBT5551-7-F is a NPN small signal Bipolar Transistor offers 600mA continuous collector current and 180V collector-base voltage. It is ideal for low power amplification and switching. • UL94V-0 Flammability rating • Epitaxial planar die construction • ...
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BC556BTA
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SC21471 |
Bipolar (BJT) Single Transistor, PNP, 65 V, 100 mA, 500 mW, TO-92, Through Hole ONSEMI The BC556BTA is a PNP epitaxial silicon Bipolar Transistor suitable for switching and amplifier applications. • High voltage VCEO • Complement to BC546
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BC817-25
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SC21379 |
Bipolar (BJT) Single Transistor, NPN, 45 V, 500 mA, 300 mW, SOT-23, Surface Mount MULTICOMP PRO The BC817-25 is a general purpose NPN Transistor with high collector current and high current gain. Designed for use in AF applications. • Low collector-emitter saturation voltage • Complement to BC807 • Multicomp Pro products are rated 4.6 out of 5 stars ...
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PMV30UN2R
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SC21452 |
Power MOSFET, N Channel, 20 V, 5.4 A, 0.024 ohm, SOT-23, Surface Mount NEXPERIA The PMV30UN2 is a N-channel enhancement mode Field-effect Transistor (FET) in a small surface-mounted device (SMD) plastic package using Trench MOSFET technology. Enhanced power dissipation capability of 1000mW. • Low threshold voltage • Very fast switchin...
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N Channel | 20V | 5.4A | 0.024ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSS138L
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SC21473 |
Power MOSFET, Trench, N Channel, 50 V, 200 mA, 2.78 ohm, SOT-23, Surface Mount ONSEMI • Channel Type : N Channel • Drain Source Voltage Vds : 50V • Continuous Drain Current Id : 200mA • Drain Source On State Resistance : 2.78ohm
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N Channel | 50V | 200mA | 2.78ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DMN10H220L-7
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SC21309 |
Power MOSFET, N Channel, 100 V, 1.4 A, 0.22 ohm, SOT-23, Surface Mount DIODES INC. DMN10H220L-7 is a N-channel enhancement mode MOSFET. This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications and loa...
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N Channel | 100V | 1.4A | 0.22ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BCX19
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SC21380 |
Bipolar (BJT) Single Transistor, NPN, 45 V, 500 mA, 250 mW, SOT-23, Surface Mount MULTICOMP PRO BCX19 is a high-performance NPN bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications. With a collector-emitter voltage rating of 45V and a maximum collector current of 500 mA, this transistor offers reliab...
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ZXMN3A01F
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SC21333 |
Power MOSFET, N Channel, 30 V, 2 A, 0.12 ohm, SOT-23, Surface Mount DIODES INC. The ZXMN3A01F is a N-channel enhancement-mode new generation TRENCH MOSFET from Zetex utilizes unique structure that combines the benefits of low ON-resistance with fast switching speed. This makes them ideal for high efficiency and low voltage application...
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N Channel | 30V | 2A | 0.12ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N7002H6327XTSA2
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SC21335 |
Power MOSFET, N Channel, 60 V, 300 mA, 1.6 ohm, SOT-23, Surface Mount INFINEON The 2N7002 H6327 is a N-channel OptiMOS™ Small Signal Transistor designed for DC-to-DC converters, eMobility, on-board charger and telecom applications. • Enhancement-mode • Logic level • Avalanche rated • Fast switching • Halogen-free
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N Channel | 60V | 300mA | 1.6ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMBFJ177LT1G
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SC21481 |
JFET Transistor, JFET, 30 V, -20 mA, 2.5 V, SOT-23, 3 Pin, 150 °C ONSEMI The MMBFJ177LT1G is a P-channel JFET designed for analogue switching and chopper applications. The low RDS (ON) provides higher efficiency and extends battery life. The device is encapsulated in a surface-mount package which saves board space. • -25V Drain...
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P Channel | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STFW3N150
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SC21522 |
Power MOSFET, N Channel, 1.5 kV, 2.5 A, 6 ohm, TO-3PF, Through Hole STMICROELECTRONICS • 1500V, 2.5A N-channel PowerMESH™ power MOSFET in 3 pin TO-3PF package • 100% avalanche tested • Intrinsic capacitances and Qg minimized • High speed switching • Fully isolated TO-3PF plastic package, creepage distance path is 5.4mm typical • Designed us...
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N Channel | 1.5kV | 2.5A | 6ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DMP3013SFV-7
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SC21312 |
Power MOSFET, P Channel, 30 V, 12 A, 0.0095 ohm, PowerDI3333, Surface Mount DIODES INC. DMP3013SFV-7 is a P-channel enhancement mode MOSFET. This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Typical applications ...
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P Channel | 30V | 12A | 0.0095ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NTD5867NLT4G
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SC21486 |
Power MOSFET, N Channel, 60 V, 20 A, 0.026 ohm, TO-252 (DPAK), Surface Mount ONSEMI The NTD5867NLT4G from On Semiconductor is a surface mount, 60V N channel power MOSFET in DPAK package. This device features high current capability, low RDS (on) and avalanche tested thus resulting in minimal conduction losses, robust load performance and ...
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N Channel | 60V | 20A | 0.026ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FMMT491ATA
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SC21316 |
Bipolar (BJT) Single Transistor, NPN, 40 V, 1 A, 500 mW, SOT-23, Surface Mount DIODES INC. FMMT491ATA is a NPN silicon planar medium power transistor. • RCE(sat) = 195mohm for a low equivalent on-resistance • hFE characterized up to 2A for high current gain hold up • Qualified to AEC-Q101 standards for high reliability, PPAP capable • Collector-...
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IRLL2705TRPBF
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SC21342 |
Power MOSFET, N Channel, 55 V, 3.8 A, 0.04 ohm, SOT-223, Surface Mount INFINEON The IRLL2705TRPBF is a HEXFET® fifth generation single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design,...
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N Channel | 55V | 3.8A | 0.04ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC858B,215
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SC21410 |
Bipolar (BJT) Single Transistor, General Purpose, PNP, 30 V, 100 mA, 250 mW, SOT-23, Surface Mount NEXPERIA The BC858 series 100mA PNP General Purpose Transistor suitable for use with general purpose switching and amplification. • Surface-mount plastic package
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