Transistors
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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MMBTA56LT1G
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SC16075 |
Bipolar (BJT) Single Transistor, PNP, -80V, -500mA, 225mW, SOT-23 ONSEMI The MMBTA56LT1G is a PNP Bipolar Transistor designed for use in linear and switching applications. The device is housed in a package which is designed for lower power surface-mount applications. • Low RDS (ON) provides higher efficiency and extends battery...
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IRLML0060TRPBF
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SC16754 |
Power MOSFET, N Channel, 60 V, 2.7 A, 0.078 ohm, SOT-23, Surface Mount INFINEON The IRLML0060TRPBF is a N-channel HEXFET® Power MOSFET for load/system switch. • Industry Standard Pinout • MSL1, Industrial Qualification • Multi-vendor Compatibility • Environmentally-friendly • Surface Mount
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N Channel | 60V | 2.7A | 0.078ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
STD35P6LLF6
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SC16818 |
SMD P Channel Power MOSFET, 60V, 35A, 0.025 Ohm, TO-252 (DPAK) STMICROELECTRONICS This device is a P-channel Power MOSFET developed using the STripFET F6 technology, with a new trench gate structure. • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss
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1+ €0.8775 (€1.08) 10+ €0.7137 (€0.88) 100+ €0.5265 (€0.65) |
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P Channel | 60V | 35A | 0.025ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FDN327N
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SC16796 |
Power MOSFET, N Channel, 20 V, 2 A, 0.07 ohm, SuperSOT, Surface Mount ONSEMI The FDN327N is a 20V specified N-channel MOSFET uses high voltage PowerTrench® process. It has been optimized for power management and load switch applications. • Fast switching speed • 4.5nC typical low gate charge
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1+ €0.1989 (€0.24) 10+ €0.1521 (€0.19) 100+ €0.1287 (€0.16) |
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N Channel | 20V | 2A | 0.07ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
ULN2003AIN
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SC18105 |
High-Voltage, High-Current Darlington Transistor Arrays, Bipolar, NPN, 50V, 500mA, DIP TEXAS INSTRUMENTS High-voltage, high-current darlington arrays each contains seven open collector darlington pairs with common emitters. Suitable for relay drivers, stepper and DC brushed motor drivers, lamp drivers, display drivers (LED and gas discharge), line drivers and...
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1+ €1.0881 (€1.34) 10+ €0.9594 (€1.18) |
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MPSA06
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SC09465 |
Transistor, NPN, TO92 CDIL
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BD238
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SC09458 |
Transistor, PNP, TO126 CDIL
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1+ €0.3393 (€0.42) 10+ €0.2808 (€0.35) |
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MJE340
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SC09459 |
Transistor, NPN, TO126 CDIL
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1+ €0.4095 (€0.50) 10+ €0.3744 (€0.46) 100+ €0.2457 (€0.30) 500+ €0.2223 (€0.27) |
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BC182B
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SC09311 |
Transistor, NPN, TO92 CDIL
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BD140
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SC08795 |
Transistor, PNP, TO126 CDIL
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5+ €0.117 (€0.14) 10+ €0.1053 (€0.13) 100+ €0.0936 (€0.12) 500+ €0.0819 (€0.10) |
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2N3705
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SC06651 |
Transistor, NPN TO92 CDIL
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2N4403
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SC09958 |
Transistor, PNP, TO92 CDIL
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BD135
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SC09460 |
Transistor, NPN, TO126 CDIL
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BD179
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SC09457 |
Transistor, NPN, TO126 CDIL
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BD237
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SC09466 |
Transistor, NPN, TO126 CDIL
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1+ €0.3627 (€0.45) 10+ €0.3159 (€0.39) 100+ €0.2223 (€0.27) 500+ €0.1521 (€0.19) |
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BC550CBU
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SC15785 |
Bipolar (BJT) Single Transistor, NPN, 45V, 100mA, 500mW, TO-92 ONSEMI The BC550CBU is a NPN epitaxial silicon Bipolar Transistor suitable for switching and amplifier applications. • Low noise • Complement to BC560
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BC547BTA
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SC15765 |
Bipolar (BJT) Single Transistor, NPN, 45V, 100mA, 500mW, TO-92 ONSEMI The BC547BTA is a NPN epitaxial Silicon Transistor features high voltage and low noise. • Complement to BC556, BC557, BC558, BC559 and BC560 • 50V Collector-base voltage • 6V Emitter-base voltage
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BC547BTA
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SC15807 |
Bipolar (BJT) Single Transistor, NPN, 45V, 100mA, 500mW, TO-92 ONSEMI The BC547BTA is a NPN epitaxial Silicon Transistor features high voltage and low noise. • Complement to BC556, BC557, BC558, BC559 and BC560 • 50V Collector-base voltage • 6V Emitter-base voltage
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2N3906BU
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SC15769 |
Bipolar (BJT) Single Transistor, PNP, 40V, -200mA, 625mW, TO-92 ONSEMI
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MRF300BN
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SC15951 |
RF FET Transistor, 133V, 272W, 1.8MHz, 250MHz, TO-247 NXP These high ruggedness devices are designed for use in high VSWR industrial, scientific and medical applications and HF and VHF communications as well as radio and VHF TV broadcast, sub--GHz aerospace and mobile radio applications. Their unmatched input and...
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N Channel | 133V | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MRF300AN
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SC15950 |
RF FET Transistor, 133V, 272W, 1.8MHz, 250MHz, TO-247 NXP These high ruggedness devices are designed for use in high VSWR industrial, scientific and medical applications and HF and VHF communications as well as radio and VHF TV broadcast, sub--GHz aerospace and mobile radio applications. Their unmatched input and...
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N Channel | 133V | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZXMP6A17GTA
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SC19122 |
Power MOSFET, P Channel, 60 V, 4.3 A, 0.125 ohm, SOT-223, Surface Mount DIODES INC. The ZXMP6A17GTA is a P-channel Enhancement Mode MOSFET with matte tin annealed over copper lead frame terminals and UL94V-0 flame-rated moulded plastic case. Designed to minimize the on-state resistance and yet maintain superior switching performance, maki...
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P Channel | 60V | 4.3A | 0.125ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDS6681Z
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SC19252 |
P Channel Power MOSFET, 30V, 20A, 0.0038 Ohm, SOIC, SMD ONSEMI The FDS6681Z is a -30V P-channel PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. The latest medium voltage power MOSFET is optimized power switches comb...
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P Channel | 30V | 20A | 0.0038ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STP55NF06L
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SC19553 |
Power MOSFET, N Channel, 60V, 55A, 0.014 Ohm, TO-220 STMICROELECTRONICS The STP55NF06L is a N-channel Power MOSFET, latest development of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and l...
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1+ €2.9133 (€3.58) 10+ €2.4921 (€3.07) 100+ €2.106 (€2.59) 500+ €1.7199 (€2.12) |
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N Channel | 60V | 55A | 0.014ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMUN2215LT1G
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SC19268 |
Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50V, 100mA, 10Kohm ONSEMI • Simplifies circuit design • Reduces board space • Reduces component count • 50V Collector-base voltage • 50V Collector-emitter voltage • 100mA Continuous collector current
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