Transistors

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MMBTA56LT1G
MMBTA56LT1G - Bipolar (BJT) Single Transistor, PNP, -80V, -500mA, 225mW, SOT-23

SC16075

Bipolar (BJT) Single Transistor, PNP, -80V, -500mA, 225mW, SOT-23

ONSEMI

The MMBTA56LT1G is a PNP Bipolar Transistor designed for use in linear and switching applications. The device is housed in a package which is designed for lower power surface-mount applications. • Low RDS (ON) provides higher efficiency and extends battery...

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IRLML0060TRPBF
IRLML0060TRPBF - Power MOSFET, N Channel, 60 V, 2.7 A, 0.078 ohm, SOT-23, Surface Mount

SC16754

Power MOSFET, N Channel, 60 V, 2.7 A, 0.078 ohm, SOT-23, Surface Mount

INFINEON

The IRLML0060TRPBF is a N-channel HEXFET® Power MOSFET for load/system switch. • Industry Standard Pinout • MSL1, Industrial Qualification • Multi-vendor Compatibility • Environmentally-friendly • Surface Mount

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N Channel 60V 2.7A 0.078ohm
STD35P6LLF6
STD35P6LLF6 - SMD P Channel Power MOSFET, 60V, 35A, 0.025 Ohm, TO-252 (DPAK)

SC16818

SMD P Channel Power MOSFET, 60V, 35A, 0.025 Ohm, TO-252 (DPAK)

STMICROELECTRONICS

This device is a P-channel Power MOSFET developed using the STripFET F6 technology, with a new trench gate structure. • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss

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P Channel 60V 35A 0.025ohm
FDN327N
FDN327N - Power MOSFET, N Channel, 20 V, 2 A, 0.07 ohm, SuperSOT, Surface Mount

SC16796

Power MOSFET, N Channel, 20 V, 2 A, 0.07 ohm, SuperSOT, Surface Mount

ONSEMI

The FDN327N is a 20V specified N-channel MOSFET uses high voltage PowerTrench® process. It has been optimized for power management and load switch applications. • Fast switching speed • 4.5nC typical low gate charge

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N Channel 20V 2A 0.07ohm
ULN2003AIN
ULN2003AIN - High-Voltage, High-Current Darlington Transistor Arrays, Bipolar, NPN, 50V, 500mA, DIP

SC18105

High-Voltage, High-Current Darlington Transistor Arrays, Bipolar, NPN, 50V, 500mA, DIP

TEXAS INSTRUMENTS

High-voltage, high-current darlington arrays each contains seven open collector darlington pairs with common emitters. Suitable for relay drivers, stepper and DC brushed motor drivers, lamp drivers, display drivers (LED and gas discharge), line drivers and...

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MPSA06
MPSA06 - Transistor, NPN, TO92

SC09465

Transistor, NPN, TO92

CDIL

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BD238
BD238 - Transistor, PNP, TO126

SC09458

Transistor, PNP, TO126

CDIL

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MJE340
MJE340 - Transistor, NPN, TO126

SC09459

Transistor, NPN, TO126

CDIL

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BC182B
BC182B - Transistor, NPN, TO92

SC09311

Transistor, NPN, TO92

CDIL

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BD140
BD140 - Transistor, PNP, TO126

SC08795

Transistor, PNP, TO126

CDIL

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2N3705
2N3705 - Transistor, NPN TO92

SC06651

Transistor, NPN TO92

CDIL

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2N4403
2N4403 - Transistor, PNP, TO92

SC09958

Transistor, PNP, TO92

CDIL

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BD135
BD135 - Transistor, NPN, TO126

SC09460

Transistor, NPN, TO126

CDIL

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BD179
BD179 - Transistor, NPN, TO126

SC09457

Transistor, NPN, TO126

CDIL

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BD237
BD237 - Transistor, NPN, TO126

SC09466

Transistor, NPN, TO126

CDIL

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BC550CBU
BC550CBU - Bipolar (BJT) Single Transistor, NPN, 45V, 100mA, 500mW, TO-92

SC15785

Bipolar (BJT) Single Transistor, NPN, 45V, 100mA, 500mW, TO-92

ONSEMI

The BC550CBU is a NPN epitaxial silicon Bipolar Transistor suitable for switching and amplifier applications. • Low noise • Complement to BC560

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BC547BTA
BC547BTA - Bipolar (BJT) Single Transistor, NPN, 45V, 100mA, 500mW, TO-92

SC15765

Bipolar (BJT) Single Transistor, NPN, 45V, 100mA, 500mW, TO-92

ONSEMI

The BC547BTA is a NPN epitaxial Silicon Transistor features high voltage and low noise. • Complement to BC556, BC557, BC558, BC559 and BC560 • 50V Collector-base voltage • 6V Emitter-base voltage

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BC547BTA
BC547BTA - Bipolar (BJT) Single Transistor, NPN, 45V, 100mA, 500mW, TO-92

SC15807

Bipolar (BJT) Single Transistor, NPN, 45V, 100mA, 500mW, TO-92

ONSEMI

The BC547BTA is a NPN epitaxial Silicon Transistor features high voltage and low noise. • Complement to BC556, BC557, BC558, BC559 and BC560 • 50V Collector-base voltage • 6V Emitter-base voltage

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2N3906BU
2N3906BU - Bipolar (BJT) Single Transistor, PNP, 40V, -200mA, 625mW, TO-92

SC15769

Bipolar (BJT) Single Transistor, PNP, 40V, -200mA, 625mW, TO-92

ONSEMI

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MRF300BN
MRF300BN - RF FET Transistor, 133V, 272W, 1.8MHz, 250MHz, TO-247

SC15951

RF FET Transistor, 133V, 272W, 1.8MHz, 250MHz, TO-247

NXP

These high ruggedness devices are designed for use in high VSWR industrial, scientific and medical applications and HF and VHF communications as well as radio and VHF TV broadcast, sub--GHz aerospace and mobile radio applications. Their unmatched input and...

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N Channel 133V - -
MRF300AN
MRF300AN - RF FET Transistor, 133V, 272W, 1.8MHz, 250MHz, TO-247

SC15950

RF FET Transistor, 133V, 272W, 1.8MHz, 250MHz, TO-247

NXP

These high ruggedness devices are designed for use in high VSWR industrial, scientific and medical applications and HF and VHF communications as well as radio and VHF TV broadcast, sub--GHz aerospace and mobile radio applications. Their unmatched input and...

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N Channel 133V - -
ZXMP6A17GTA
ZXMP6A17GTA - Power MOSFET, P Channel, 60 V, 4.3 A, 0.125 ohm, SOT-223, Surface Mount

SC19122

Power MOSFET, P Channel, 60 V, 4.3 A, 0.125 ohm, SOT-223, Surface Mount

DIODES INC.

The ZXMP6A17GTA is a P-channel Enhancement Mode MOSFET with matte tin annealed over copper lead frame terminals and UL94V-0 flame-rated moulded plastic case. Designed to minimize the on-state resistance and yet maintain superior switching performance, maki...

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P Channel 60V 4.3A 0.125ohm
FDS6681Z
FDS6681Z - P Channel Power MOSFET, 30V, 20A, 0.0038 Ohm, SOIC, SMD

SC19252

P Channel Power MOSFET, 30V, 20A, 0.0038 Ohm, SOIC, SMD

ONSEMI

The FDS6681Z is a -30V P-channel PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. The latest medium voltage power MOSFET is optimized power switches comb...

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P Channel 30V 20A 0.0038ohm
STP55NF06L
STP55NF06L - Power MOSFET, N Channel, 60V, 55A, 0.014 Ohm, TO-220

SC19553

Power MOSFET, N Channel, 60V, 55A, 0.014 Ohm, TO-220

STMICROELECTRONICS

The STP55NF06L is a N-channel Power MOSFET, latest development of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and l...

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N Channel 60V 55A 0.014ohm
MMUN2215LT1G
MMUN2215LT1G - Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50V, 100mA, 10Kohm

SC19268

Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50V, 100mA, 10Kohm

ONSEMI

• Simplifies circuit design • Reduces board space • Reduces component count • 50V Collector-base voltage • 50V Collector-emitter voltage • 100mA Continuous collector current

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