Transistors
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Channel Type | Drain Source Voltage Vds | Continuous Drain Current Id | Drain Source On State Resistance | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FQT7N10LTF
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SC16853 |
Power MOSFET, N Channel, 100 V, 1.7 A, 0.275 ohm, SOT-223, Surface Mount ONSEMI The FQT7N10LTF is a N-channel enhancement-mode Power MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalan...
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N Channel | 100V | 1.7A | 0.275ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI2318CDS-T1-GE3
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SC16746 |
Power MOSFET, N Channel, 40 V, 3.9 A, 0.036 ohm, TO-236, Surface Mount VISHAY • N-channel 40V (D-S) TrenchFET® power MOSFET • 100% Rg tested • Used in DC/DC converters, load switch
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N Channel | 40V | 3.9A | 0.036ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SIS412DN-T1-GE3
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SC16901 |
Power MOSFET, N Channel, 30 V, 12 A, 0.02 ohm, PowerPAK 1212, Surface Mount VISHAY The SIS412DN-T1-GE3 is a 30V N-channel TrenchFET® Power MOSFET. Suitable for load switches, notebook PCs, desktop PCs and game station applications. The N-channel MOSFET for switching applications are now available with die on resistances around 1mΩ and wi...
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1+ €0.4998 (€0.61) 10+ €0.4046 (€0.50) 100+ €0.2975 (€0.37) |
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N Channel | 30V | 12A | 0.02ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI7149ADP-T1-GE3
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SC16823 |
SMD P Channel Power MOSFET, 30V, 50A, 0.0042 Ohm, PowerPAK SO VISHAY • Suitable for battery, load and adaptor switches, notebook computers and notebook battery packs • TrenchFET® Power MOSFET • Low On-Resistance for Low Voltage Drop • Extended VGS max. Rating: 25V
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P Channel | 30V | 50A | 0.0042ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMBT5551LT1G
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SC16063 |
Bipolar Single Transistor, BJT, General Purpose, NPN, 160V, 600mA, 225mW, SOT-23, SMD ONSEMI The MMBT5551LT1G is an NPN Silicon High Voltage Transistor designed for requiring unique site and control change requirements. This transistor is PPAP capable and AEC-Q101 qualified. • Halogen-free
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FDT439N
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SC16892 |
Power MOSFET, N Channel, 30 V, 6.3 A, 0.038 ohm, SOT-223, Surface Mount ONSEMI The FDT439N is a 30V N-channel 2.5V specified enhancement mode Field Effect Transistor is produced using high cell density and DMOS technology. This very high density process is specially tailored to minimize on-state resistance and provide superior switch...
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N Channel | 30V | 6.3A | 0.038ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMUN2233LT1G
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SC15940 |
Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50V, 100mA, 4.7 kohm, 47 kohm ONSEMI MMUN2233LT1G is an MMUN2233L series NPN transistor with a monolithic bias resistor network digital transistor. It is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor...
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2SC5242OTU
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SC15936 |
Bipolar (BJT) Single Transistor, NPN, 250V, 17A, 130W, TO-3P ONSEMI
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SI1308EDL-T1-GE3
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SC16893 |
Power MOSFET, N Channel, 30 V, 1.4 A, 0.11 ohm, SOT-323, Surface Mount VISHAY The SI1308EDL-T1-GE3 is a 30V N-channel TrenchFET® Power MOSFET with power dissipation at 500mW. • PWM optimized for fast switching • 100% Rg Tested • Up to 1800V ESD protection • Halogen-free
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N Channel | 30V | 1.4A | 0.11ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FGH60N60SMD
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SC15919 |
IGBT Single Transistor, 120A, 600V, 600W, TO-247AB, ONSEMI The FGH60N60SMD is a Field Stop IGBT with high current capability and low saturation voltage. • Fast switching • 175°C maximum junction temperature • Tighten parameter distribution • High input impedance • Positive temperature coefficient for easy parallel...
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DMMT5401-7-F
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SC16130 |
Bipolar Transistor Array, PNP, -150V, -200mA, 300mW, 60hFE, SOT-26 DIODES INC. The DMMT5401-7-F is a matched PNP small signal surface-mount Transistor Array ideal for low power amplification and switching. • UL94V-0 Flammability rating • Epitaxial planar die construction • DMMT5551 Complementary NPN type • Intrinsically matched PNP p...
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IRLB8721PBF
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SC16954 |
Power MOSFET, N Channel, 30 V, 31 A, 0.0065 ohm, TO-220AB, Through Hole INFINEON The IRLB8721PBF is a 30V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high frequency synchronous buck, converters for computer processor ...
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N Channel | 30V | 31A | 0.0065ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI7252DP-T1-GE3
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SC16806 |
Dual MOSFET, N Channel, 100V, 36.7A, 0.014 Ohm, PowerPAK SO, SMD VISHAY Dual N-channel 100V (D-S) MOSFET for use in primary side switching, synchronous rectification and DC/AC inverters. • TrenchFET® power MOSFET • 100% Rg tested
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N Channel | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N7002BKVL
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SC16816 |
Power MOSFET, N Channel, 60 V, 350 mA, 1 ohm, TO-236AB, Surface Mount NEXPERIA • Suitable for Relay driver, High-speed line driver, Low-side loadswitch and switching circuits applications • Logic-level compatible • Very fast switching • Trench MOSFET technology • ESD protection up to 2kV • AEC-Q101 qualified
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N Channel | 60V | 350mA | 1ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FQPF7N65C
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SC16961 |
Power MOSFET, N Channel, 650 V, 7 A, 1.4 ohm, TO-220F, Through Hole ONSEMI The FQPF7N65C is a N-channel QFET® enhancement-mode power MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance and to provide superior switching performance and ...
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N Channel | 650V | 7A | 1.4ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N6284G
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SC15801 |
Bipolar (BJT) Single Transistor, NPN, 100V, 20A, 160W, TO-3 ONSEMI The 2N6284G is a NPN Darlington bipolar Power Transistor with monolithic construction, built-in base-emitter shunt resistors, designed for general-purpose amplifier and low-frequency switching applications. • High DC current gain • 1.09°C/W Junction-to-cas...
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SUD50P06-15-GE3
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SC16924 |
Power MOSFET, P Channel, 60 V, 50 A, 0.012 ohm, TO-252 (DPAK), Surface Mount VISHAY The SUD50P06-15-GE3 is a 60V P-channel TrenchFET® Power MOSFET with power dissipation at 2.5W. This power MOSFET is designed for load switch. • ±20V Gate-source voltage
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P Channel | 60V | 50A | 0.012ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFZ44ZPBF
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SC16925 |
Power MOSFET, Automotive, N Channel, 55 V, 51 A, 0.0139 ohm, TO-220AB, Through Hole INFINEON The IRFZ44ZPBF is a 55V single N-channel HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching s...
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N Channel | 55V | 51A | 0.0139ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI4435DY.
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SC16856 |
Power MOSFET, P Channel, 30 V, 8.8 A, 0.015 ohm, SOIC, Surface Mount ONSEMI The SI4435DY is a -30V P-channel PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. The latest medium voltage power MOSFET is optimized power switches comb...
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P Channel | 30V | 8.8A | 0.015ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF9321TRPBF
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SC15976 |
Power MOSFET, P Channel, 30V, 15A, 0.0059 Ohm, SOIC, SMD INFINEON • Channel Type : P Channel • Drain Source Voltage Vds : 30V • Continuous Drain Current Id : 15A • Drain Source On State Resistance : 0.0059ohm
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P Channel | 30V | 15A | 0.0059ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IPD85P04P4L06ATMA1
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SC15972 |
Power MOSFET, P Channel, 40V, 85A, 0.0053 Ohm, TO-252 (DPAK), SMD INFINEON • Channel Type : P Channel • Drain Source Voltage Vds : 40V • Continuous Drain Current Id : 85A • Drain Source On State Resistance : 0.0053ohm
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P Channel | 40V | 85A | 0.0053ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC848C-7-F
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SC16108 |
Bipolar (BJT) Single Transistor, NPN, 30V, 100mA, 300mW, SOT-23, SMD DIODES INC. The BC848C-7-F is a NPN small signal Bipolar Transistor ideally suitable for automatic insertion, switching and AF amplifier applications. • UL94V-0 Flammability rating • BC856 - BC858 Complementary PNP types • Halogen-free, Green device • -65 to 150°C Ope...
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TP2104N3-G
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SC16920 |
P Channel Power MOSFET, Vertical DMOS FET, 40V, 175mA, 6 Ohm, TO-92 MICROCHIP This low threshold, enhancement-mode (normally-off) transistor utilises a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors...
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P Channel | 40V | 175mA | 6ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRLML6401TRPBF
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SC16733 |
Power MOSFET, P Channel, 12 V, 4.3 A, 0.05 ohm, SOT-23, Surface Mount INFINEON The IRLML6401TRPBF is a -12V single P-channel HEXFET Power MOSFET, compatible with existing surface mount techniques. This MOSFET features increased reliability and easier manufacturing. • Halogen-free • MSL1, Industrial qualification • Multi-vendor compat...
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P Channel | 12V | 4.3A | 0.05ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SQM120P06-07L_GE3
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SC16844 |
SMD P Channel Power MOSFET, 60V, 120A, 0.0056 Ohm, TO-263 (D2PAK) VISHAY • TrenchFET® Power MOSFET • Package with Low Thermal Resistance • 100% Rg and UIS Tested
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P Channel | 60V | 120A | 0.0056ohm |