Transistors
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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IKW40N120H3FKSA1
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SC15918 |
IGBT Single Transistor, 40A, 2.4V, 483W, 1.2kV, TO-247 INFINEON The IKW40N120H3 is a 1200V Discrete IGBT with very soft, fast recovery anti-parallel diode designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz. The key feature of this family is a MOSFET-like turn-off switch...
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BSN20-7
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SC15958 |
Power MOSFET, N Channel, 50V, 500mA, 1.3 Ohm, SOT-23, SMD DIODES INC. BSN20-7 is a N-channel enhancement mode field MOSFET. This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applicatio...
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N Channel | 50V | 500mA | 1.8ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BC32725BU
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SC15778 |
Bipolar (BJT) Single Transistor, PNP, -45 V, -800mA, 625mW, TO-92 ONSEMI The BC32725BU is a PNP Epitaxial Silicon Transistor suitable for AF-driver stages, low-power output stages, switching and amplifier applications. • Complement to BC337
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NTZD3154NT1G
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SC16697 |
SMD Dual MOSFET N Channel Transistor, SOT-563, 20V, 540mA ONSEMI The NTZD3154NT1G is a dual N-channel small signal MOSFET designed for cell phones, digital cameras, PDAs and pagers etc. It is suitable for load/power switches, power supply converter circuits and battery management applications. • Low RDS (ON) improving s...
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N Channel | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSS806NEH6327XTSA1
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SC16876 |
Power MOSFET, N Channel, 20 V, 2.3 A, 0.041 ohm, SOT-23, Surface Mount INFINEON • N-channel Optima's™-2 small signal transistor • Enhancement mode • Ultra-logic level (1.8V rated) • ESD protected • Avalanche rated • Qualified according to AEC Q101
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N Channel | 20V | 2.3A | 0.041ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMBTH81
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SC16005 |
Bipolar - RF Transistor, PNP, 20V, 600MHz, 225mW, -50mA, SOT-23 ONSEMI The MMBTH81 is a PNP RF Transistor designed for general RF amplifier and mixer applications to 250mHz with collector currents in the 1 to 30mA range. • 20V Collector-emitter voltage • 20V Collector-base voltage • 3V Emitter-base voltage • 50mA Continuous c...
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IRFB4227PBF
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SC17001 |
Power MOSFET, N Channel, 200 V, 65 A, 0.0197 ohm, TO-220AB, Through Hole INFINEON The IRFB4227PBF is a 200V single N-channel HEXFET® Power MOSFET PDP switch designed to sustain, energy recovery and pass switch applications for plasma display panels. By adapting the latest techniques it achieves low on-resistance per silicon area and EPU...
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N Channel | 200V | 65A | 0.0197ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC857A,215
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SC16044 |
Bipolar (BJT) Single Transistor, PNP, 45V, 100mA, 250mW, SOT-23, SMD NEXPERIA The BC857 series 100mA PNP General Purpose Transistor suitable for use with general purpose switching and amplification. • 3H Marking code • Surface-mount plastic package
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SI4925DDY-T1-GE3
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SC16688 |
SMD Dual MOSFET P Channel Transistor, SOIC, 30V, 8A VISHAY The SI4925DDY-T1-GE3 is a -30V Dual P-channel TrenchFET® Power MOSFET. Suitable for load switches, notebook PCs, desktop PCs and game station applications. The surface-mounted LITTLE FOOT® power MOSFET uses integrated circuit and small-signal packages whic...
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P Channel | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FZT705
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SC16115 |
Bipolar (BJT) Single Transistor, Darlington, PNP, 120V, -2A, 2W, SOT-223, SMD DIODES INC. The FZT705 is a -120V Silicon PNP Planar Medium Power Darlington Transistor with 2W power dissipation. • Guaranteed hFE specified up to 2A • Surface mount transistor
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NTD25P03LT4G
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SC16886 |
Power MOSFET, Logic Level, P Channel, 30 V, 25 A, 0.056 ohm, TO-252 (DPAK), Surface Mount ONSEMI The NTD25P03LT4G is a -30V P-channel Power MOSFET designed for low voltage, high speed switching applications and to withstand high energy in the avalanche and commutation modes. The source to drain diode recovery time is comparable to a discrete fast reco...
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P Channel | 30V | 25A | 0.056ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC847BS,115
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SC16119 |
Bipolar Transistor Array, NPN, 45V, 100mA, 250mW, 200hFE NEXPERIA The BC847BS from NXP is a surface mount NPN/PNP general purpose transistor in SOT-363 (SC-88) package. This transistor is characterized with low collector capacitance, low collector to emitter saturation voltage and closely matched current gain. It reduces...
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PDTC114ET,215
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SC15942 |
Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50V, 100mA, 10 kohm, 10 kohm NEXPERIA The PDTC114ET,215 is a NPN Resistor-equipped Transistor family in a small surface mounted device plastic package with 3 leads, built-in bias resistors, simplifies circuit design and reduces component count. • 100mA Output current capability • Reduces pick ...
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IRLL014NTRPBF
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SC16905 |
Power MOSFET, HEXFET, N Channel, 55 V, 2 A, 0.14 ohm, SOT-223, Surface Mount INFINEON The IRLL014NTRPBF is a HEXFET® fifth generation single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design,...
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N Channel | 55V | 2A | 0.14ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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CSD19534Q5AT
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SC16686 |
SMD Power MOSFET N Channel NexFET Transistor, 100V, 50A TEXAS INSTRUMENTS The CSD19534Q5AT is a NexFET™ N-channel Power MOSFET designed to minimize losses in power conversion applications. It is suitable for use in primary side telecom applications. • Ultra-low Qg and Qgd • Low thermal resistance • Avalanche rated • Halogen-free...
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N Channel | 100V | 50A | 0.0126ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRLML6344TRPBF
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SC16730 |
Power MOSFET, N Channel, 30 V, 5 A, 0.022 ohm, SOT-23, Surface Mount INFINEON The IRLML6344TRPBF is a N-channel HEXFET® Power MOSFET for load/system switch. • Industry Standard • MSL1, Industrial Qualification • Multi-vendor Compatibility • Environmentally-friendly • Surface Mount
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N Channel | 30V | 5A | 0.022ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC817-25
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SC16054 |
Bipolar (BJT) Single Transistor, NPN, 45V, 500mA, 310mW, SOT-23, SMD DIODES INC. BC817-25 is a NPN general-purpose transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. • Collector-emitter voltage is 45V (open base, Tamb = 25°C), collector current is 500mA (Tamb = 25°C) • Peak collector current is 1A (sin...
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BCP56-16T1G
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SC16067 |
Bipolar (BJT) Single Transistor, General Purpose, NPN, 80V, 1A, 1.5W, SOT-223, SMD ONSEMI The BCP56-16T1G is a NPN bipolar Silicon Epitaxial Transistor designed for use in audio amplifier applications. The device is housed in the package which is designed for medium power surface-mount applications. This package can be soldered using wave or re...
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2SC5200OTU
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SC15777 |
Bipolar (BJT) Single Transistor, NPN, 250V, 17A, 150W, TO-264AA ONSEMI The 2SC5200OTU is a 250V NPN Epitaxial Silicon Transistor features high current capability and high power dissipation. Suitable for high fidelity audio output amplifier and general purpose power amplifier applications. This product is general usage and sui...
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SI4401DDY-T1-GE3
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SC16821 |
Power MOSFET, P Channel, 40 V, 16.1 A, 0.018 ohm, SOIC, Surface Mount VISHAY The SI4401DDY-T1-GE3 is a 40VDS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for load switch and POL applications. • 100% Rg tested • 100% UIS tested • Halogen-free • -55 to 150°C Operating temperature range
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P Channel | 40V | 16.1A | 0.018ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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PMBT2907A,215
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SC16074 |
Bipolar (BJT) Single Transistor, PNP, -60V, -600mA, 250mW, TO-236AB NEXPERIA The PMBT2907A,215 is a 600mA PNP Switching Transistor in a small surface-mount plastic package. • Single general-purpose • AEC-Q101 qualified • NPN complement is PMBT2222A • %2F Marking code
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FMMT723TA
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SC16104 |
Bipolar (BJT) Single Transistor, PNP, 100V, 1A, 625mW, SOT-23, SMD DIODES INC. The FMMT723TA is a PNP silicon low saturation Bipolar Transistor offers 625mW power dissipation and -1A high continuous collector current. It is suitable for high-side driver and load disconnect switch applications. • UL94V-0 Flammability rating • -2.5A Pe...
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IRFB4020PBF
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SC16951 |
Power MOSFET, N Channel, 200 V, 18 A, 0.1 ohm, TO-220AB, Through Hole INFINEON The IRFB4020PBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve low ON-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and internal gate resistance are optimized to improve ...
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N Channel | 200V | 18A | 0.1ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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KSA992FTA
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SC15795 |
Bipolar (BJT) Single Transistor, PNP, -120V, -50mA, 500mW, TO-226AA ONSEMI The KSA992FTA is a PNP Epitaxial Silicon Transistor offers -120V collector base voltage and -50mA collector current. It is suitable for audio frequency low-noise amplifier applications. • Complement to KSC1845
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MMBTA92LT1G
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SC16079 |
Bipolar (BJT) Single Transistor, PNP, -300V, -500mA, 300mW, SOT-23 ONSEMI The MMBTA92LT1G is a PNP high voltage Bipolar Transistor designed for general purpose amplifier applications. This device is housed in a package which is designed for low power surface-mount applications. • AEC-Q101 qualified and PPAP capable
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