Transistors

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IKW40N120H3FKSA1
IKW40N120H3FKSA1 - IGBT Single Transistor, 40A, 2.4V, 483W, 1.2kV, TO-247

SC15918

IGBT Single Transistor, 40A, 2.4V, 483W, 1.2kV, TO-247

INFINEON

The IKW40N120H3 is a 1200V Discrete IGBT with very soft, fast recovery anti-parallel diode designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz. The key feature of this family is a MOSFET-like turn-off switch...

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BSN20-7
BSN20-7 - Power MOSFET, N Channel, 50V, 500mA, 1.3 Ohm, SOT-23, SMD

SC15958

Power MOSFET, N Channel, 50V, 500mA, 1.3 Ohm, SOT-23, SMD

DIODES INC.

BSN20-7 is a N-channel enhancement mode field MOSFET. This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applicatio...

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N Channel 50V 500mA 1.8ohm
BC32725BU
BC32725BU - Bipolar (BJT) Single Transistor, PNP, -45 V, -800mA, 625mW, TO-92

SC15778

Bipolar (BJT) Single Transistor, PNP, -45 V, -800mA, 625mW, TO-92

ONSEMI

The BC32725BU is a PNP Epitaxial Silicon Transistor suitable for AF-driver stages, low-power output stages, switching and amplifier applications. • Complement to BC337

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NTZD3154NT1G
NTZD3154NT1G - SMD Dual MOSFET N Channel Transistor, SOT-563, 20V, 540mA

SC16697

SMD Dual MOSFET N Channel Transistor, SOT-563, 20V, 540mA

ONSEMI

The NTZD3154NT1G is a dual N-channel small signal MOSFET designed for cell phones, digital cameras, PDAs and pagers etc. It is suitable for load/power switches, power supply converter circuits and battery management applications. • Low RDS (ON) improving s...

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N Channel - - -
BSS806NEH6327XTSA1
BSS806NEH6327XTSA1 - Power MOSFET, N Channel, 20 V, 2.3 A, 0.041 ohm, SOT-23, Surface Mount

SC16876

Power MOSFET, N Channel, 20 V, 2.3 A, 0.041 ohm, SOT-23, Surface Mount

INFINEON

• N-channel Optima's™-2 small signal transistor • Enhancement mode • Ultra-logic level (1.8V rated) • ESD protected • Avalanche rated • Qualified according to AEC Q101

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N Channel 20V 2.3A 0.041ohm
MMBTH81
MMBTH81 - Bipolar - RF Transistor, PNP, 20V, 600MHz, 225mW, -50mA, SOT-23

SC16005

Bipolar - RF Transistor, PNP, 20V, 600MHz, 225mW, -50mA, SOT-23

ONSEMI

The MMBTH81 is a PNP RF Transistor designed for general RF amplifier and mixer applications to 250mHz with collector currents in the 1 to 30mA range. • 20V Collector-emitter voltage • 20V Collector-base voltage • 3V Emitter-base voltage • 50mA Continuous c...

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IRFB4227PBF
IRFB4227PBF - Power MOSFET, N Channel, 200 V, 65 A, 0.0197 ohm, TO-220AB, Through Hole

SC17001

Power MOSFET, N Channel, 200 V, 65 A, 0.0197 ohm, TO-220AB, Through Hole

INFINEON

The IRFB4227PBF is a 200V single N-channel HEXFET® Power MOSFET PDP switch designed to sustain, energy recovery and pass switch applications for plasma display panels. By adapting the latest techniques it achieves low on-resistance per silicon area and EPU...

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N Channel 200V 65A 0.0197ohm
BC857A,215
BC857A,215 - Bipolar (BJT) Single Transistor, PNP, 45V, 100mA, 250mW, SOT-23, SMD

SC16044

Bipolar (BJT) Single Transistor, PNP, 45V, 100mA, 250mW, SOT-23, SMD

NEXPERIA

The BC857 series 100mA PNP General Purpose Transistor suitable for use with general purpose switching and amplification. • 3H Marking code • Surface-mount plastic package

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SI4925DDY-T1-GE3
SI4925DDY-T1-GE3 - SMD Dual MOSFET P Channel Transistor, SOIC, 30V, 8A

SC16688

SMD Dual MOSFET P Channel Transistor, SOIC, 30V, 8A

VISHAY

The SI4925DDY-T1-GE3 is a -30V Dual P-channel TrenchFET® Power MOSFET. Suitable for load switches, notebook PCs, desktop PCs and game station applications. The surface-mounted LITTLE FOOT® power MOSFET uses integrated circuit and small-signal packages whic...

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P Channel - - -
FZT705
FZT705 - Bipolar (BJT) Single Transistor, Darlington, PNP, 120V, -2A, 2W, SOT-223, SMD

SC16115

Bipolar (BJT) Single Transistor, Darlington, PNP, 120V, -2A, 2W, SOT-223, SMD

DIODES INC.

The FZT705 is a -120V Silicon PNP Planar Medium Power Darlington Transistor with 2W power dissipation. • Guaranteed hFE specified up to 2A • Surface mount transistor

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NTD25P03LT4G
NTD25P03LT4G - Power MOSFET, Logic Level, P Channel, 30 V, 25 A, 0.056 ohm, TO-252 (DPAK), Surface Mount

SC16886

Power MOSFET, Logic Level, P Channel, 30 V, 25 A, 0.056 ohm, TO-252 (DPAK), Surface Mount

ONSEMI

The NTD25P03LT4G is a -30V P-channel Power MOSFET designed for low voltage, high speed switching applications and to withstand high energy in the avalanche and commutation modes. The source to drain diode recovery time is comparable to a discrete fast reco...

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P Channel 30V 25A 0.056ohm
BC847BS,115
BC847BS,115 - Bipolar Transistor Array, NPN, 45V, 100mA, 250mW, 200hFE

SC16119

Bipolar Transistor Array, NPN, 45V, 100mA, 250mW, 200hFE

NEXPERIA

The BC847BS from NXP is a surface mount NPN/PNP general purpose transistor in SOT-363 (SC-88) package. This transistor is characterized with low collector capacitance, low collector to emitter saturation voltage and closely matched current gain. It reduces...

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PDTC114ET,215
PDTC114ET,215 - Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50V, 100mA, 10 kohm, 10 kohm

SC15942

Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50V, 100mA, 10 kohm, 10 kohm

NEXPERIA

The PDTC114ET,215 is a NPN Resistor-equipped Transistor family in a small surface mounted device plastic package with 3 leads, built-in bias resistors, simplifies circuit design and reduces component count. • 100mA Output current capability • Reduces pick ...

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IRLL014NTRPBF
IRLL014NTRPBF - Power MOSFET, HEXFET, N Channel, 55 V, 2 A, 0.14 ohm, SOT-223, Surface Mount

SC16905

Power MOSFET, HEXFET, N Channel, 55 V, 2 A, 0.14 ohm, SOT-223, Surface Mount

INFINEON

The IRLL014NTRPBF is a HEXFET® fifth generation single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design,...

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N Channel 55V 2A 0.14ohm
CSD19534Q5AT
CSD19534Q5AT - SMD Power MOSFET N Channel NexFET Transistor, 100V, 50A

SC16686

SMD Power MOSFET N Channel NexFET Transistor, 100V, 50A

TEXAS INSTRUMENTS

The CSD19534Q5AT is a NexFET™ N-channel Power MOSFET designed to minimize losses in power conversion applications. It is suitable for use in primary side telecom applications. • Ultra-low Qg and Qgd • Low thermal resistance • Avalanche rated • Halogen-free...

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N Channel 100V 50A 0.0126ohm
IRLML6344TRPBF
IRLML6344TRPBF - Power MOSFET, N Channel, 30 V, 5 A, 0.022 ohm, SOT-23, Surface Mount

SC16730

Power MOSFET, N Channel, 30 V, 5 A, 0.022 ohm, SOT-23, Surface Mount

INFINEON

The IRLML6344TRPBF is a N-channel HEXFET® Power MOSFET for load/system switch. • Industry Standard • MSL1, Industrial Qualification • Multi-vendor Compatibility • Environmentally-friendly • Surface Mount

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N Channel 30V 5A 0.022ohm
BC817-25
BC817-25 - Bipolar (BJT) Single Transistor, NPN, 45V, 500mA, 310mW, SOT-23, SMD

SC16054

Bipolar (BJT) Single Transistor, NPN, 45V, 500mA, 310mW, SOT-23, SMD

DIODES INC.

BC817-25 is a NPN general-purpose transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. • Collector-emitter voltage is 45V (open base, Tamb = 25°C), collector current is 500mA (Tamb = 25°C) • Peak collector current is 1A (sin...

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BCP56-16T1G
BCP56-16T1G - Bipolar (BJT) Single Transistor, General Purpose, NPN, 80V, 1A, 1.5W, SOT-223, SMD

SC16067

Bipolar (BJT) Single Transistor, General Purpose, NPN, 80V, 1A, 1.5W, SOT-223, SMD

ONSEMI

The BCP56-16T1G is a NPN bipolar Silicon Epitaxial Transistor designed for use in audio amplifier applications. The device is housed in the package which is designed for medium power surface-mount applications. This package can be soldered using wave or re...

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2SC5200OTU
2SC5200OTU - Bipolar (BJT) Single Transistor, NPN, 250V, 17A, 150W, TO-264AA

SC15777

Bipolar (BJT) Single Transistor, NPN, 250V, 17A, 150W, TO-264AA

ONSEMI

The 2SC5200OTU is a 250V NPN Epitaxial Silicon Transistor features high current capability and high power dissipation. Suitable for high fidelity audio output amplifier and general purpose power amplifier applications. This product is general usage and sui...

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SI4401DDY-T1-GE3
SI4401DDY-T1-GE3 - Power MOSFET, P Channel, 40 V, 16.1 A, 0.018 ohm, SOIC, Surface Mount

SC16821

Power MOSFET, P Channel, 40 V, 16.1 A, 0.018 ohm, SOIC, Surface Mount

VISHAY

The SI4401DDY-T1-GE3 is a 40VDS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for load switch and POL applications. • 100% Rg tested • 100% UIS tested • Halogen-free • -55 to 150°C Operating temperature range

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P Channel 40V 16.1A 0.018ohm
PMBT2907A,215
PMBT2907A,215 - Bipolar (BJT) Single Transistor, PNP, -60V, -600mA, 250mW, TO-236AB

SC16074

Bipolar (BJT) Single Transistor, PNP, -60V, -600mA, 250mW, TO-236AB

NEXPERIA

The PMBT2907A,215 is a 600mA PNP Switching Transistor in a small surface-mount plastic package. • Single general-purpose • AEC-Q101 qualified • NPN complement is PMBT2222A • %2F Marking code

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FMMT723TA
FMMT723TA - Bipolar (BJT) Single Transistor, PNP, 100V, 1A, 625mW, SOT-23, SMD

SC16104

Bipolar (BJT) Single Transistor, PNP, 100V, 1A, 625mW, SOT-23, SMD

DIODES INC.

The FMMT723TA is a PNP silicon low saturation Bipolar Transistor offers 625mW power dissipation and -1A high continuous collector current. It is suitable for high-side driver and load disconnect switch applications. • UL94V-0 Flammability rating • -2.5A Pe...

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IRFB4020PBF
IRFB4020PBF - Power MOSFET, N Channel, 200 V, 18 A, 0.1 ohm, TO-220AB, Through Hole

SC16951

Power MOSFET, N Channel, 200 V, 18 A, 0.1 ohm, TO-220AB, Through Hole

INFINEON

The IRFB4020PBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve low ON-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and internal gate resistance are optimized to improve ...

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N Channel 200V 18A 0.1ohm
KSA992FTA
KSA992FTA - Bipolar (BJT) Single Transistor, PNP, -120V, -50mA, 500mW, TO-226AA

SC15795

Bipolar (BJT) Single Transistor, PNP, -120V, -50mA, 500mW, TO-226AA

ONSEMI

The KSA992FTA is a PNP Epitaxial Silicon Transistor offers -120V collector base voltage and -50mA collector current. It is suitable for audio frequency low-noise amplifier applications. • Complement to KSC1845

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MMBTA92LT1G
MMBTA92LT1G - Bipolar (BJT) Single Transistor, PNP, -300V, -500mA, 300mW, SOT-23

SC16079

Bipolar (BJT) Single Transistor, PNP, -300V, -500mA, 300mW, SOT-23

ONSEMI

The MMBTA92LT1G is a PNP high voltage Bipolar Transistor designed for general purpose amplifier applications. This device is housed in a package which is designed for low power surface-mount applications. • AEC-Q101 qualified and PPAP capable

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