Transistors
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| Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Channel Type | Drain Source Voltage Vds | Continuous Drain Current Id | Drain Source On State Resistance | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDP33N25
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SC16999 |
Power MOSFET, N Channel, 250 V, 33 A, 0.094 ohm, TO-220, Through Hole ONSEMI The FDP33N25 is an UniFET™ N-channel high voltage MOSFET produced based on planar stripe and DMOS technology. This MOSFET is tailored to reduce ON-state resistance, provide better switching performance and higher avalanche energy strength. It is suitable f...
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N Channel | 250V | 33A | 0.094ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BC547CBU
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SC15784 |
Bipolar (BJT) Single Transistor, NPN, 45V, 100mA, 500mW, TO-92 ONSEMI The BC547CBU is a NPN epitaxial silicon Bipolar Transistor suitable for switching and amplifier applications. • Complement to BC557
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BSR14
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SC16031 |
Bipolar (BJT) Single Transistor, NPN, 40V, 800mA, 350mW, SOT-23, SMD ONSEMI The BSR14 is a NPN general purpose Bipolar Transistor designed for use as a medium power amplifier and switch requiring collector currents up to 500mA. • Sourced from Process 19 • -55 to 150°C Operating junction temperature range
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IRF710PBF
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SC16964 |
Power MOSFET, N Channel, 400 V, 1.5 A, 3.6 ohm, TO-220AB, Through Hole VISHAY The IRF710PBF is a 400V N-channel Power MOSFET, third generation power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is universally preferred for all commercial-industr...
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N Channel | 400V | 1.5A | 3.6ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SUM90P10-19L-E3
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SC16855 |
Power MOSFET, P Channel, 100 V, 90 A, 0.0156 ohm, TO-263 (D2PAK), Surface Mount VISHAY The SUM90P10-19L-E3 is a -100V P-channel TrenchFET® Power MOSFET.
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P Channel | 100V | 90A | 0.0156ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FGA60N65SMD
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SC15921 |
IGBT Single Transistor, 120A, 1.9V, 600W, 650V, TO-3PN ONSEMI
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SI9945BDY-T1-GE3
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SC16801 |
Dual MOSFET, N Channel, 60V, 5.3A, 0.046 Ohm, SOIC, SMD VISHAY The SI9945BDY-T1-GE3 is a 60V Dual N-channel TrenchFET® Power MOSFET. Suitable for use in LCD TV CCFL inverter and load switch applications. The surface-mounted LITTLE FOOT® power MOSFET uses integrated circuit and small-signal packages which have been mod...
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N Channel | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDV305N
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SC16822 |
Power MOSFET, N Channel, 20 V, 900 mA, 0.22 ohm, SOT-23, Surface Mount ONSEMI The FDV305N is a N-channel MOSFET uses high voltage PowerTrench® process. It has been optimized for load switch and battery protection applications. • Low gate charge • Fast switching speed • High performance Trench technology for extremely low RDS (ON)
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N Channel | 20V | 900mA | 0.22ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N7000-G
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SC16917 |
Power MOSFET, N Channel, 60 V, 200 mA, 5 ohm, TO-92, Through Hole MICROCHIP • 60V, 5ohm, N-channel, enhancement-mode, vertical DMOS FET • Free from secondary breakdown • Low power drive requirement • Ease of paralleling • Low CISS and fast switching speeds • Excellent thermal stability • Integral source-drain diode • High input i...
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N Channel | 60V | 200mA | 5ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DMP2035U-7
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SC15959 |
Power MOSFET, P Channel, 20V, 3.6A, 0.023 Ohm, SOT-23, SMD DIODES INC. DMP2035U-7 is a P-channel enhancement mode MOSFET. • Low on-resistance, low input capacitance, fast switching speed • Low input/output leakage, ESD protected • Drain-source voltage is -20V at TA = +25°C • Gate-source voltage is ±10V at TA = +25°C • Continu...
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P Channel | 20V | 3.6A | 0.035ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFP250MPBF
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SC16971 |
Power MOSFET, N Channel, 200 V, 30 A, 0.075 ohm, TO-247AC, Through Hole INFINEON • Single N-channel HEXFET® power MOSFET • Advanced process technology • Fast switching • Fully avalanche rated • Dynamic dv/dt rating • Ease of paralleling • Simple drive requirements • Planar cell structure for wide SOA • Product qualification according ...
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N Channel | 200V | 30A | 0.075ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF9540PBF
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SC16949 |
Power MOSFET, P Channel, 100 V, 19 A, 0.2 ohm, TO-220AB, Through Hole VISHAY The IRF9540PBF is a -100V P-channel Power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The low thermal resistance contributes to its wide acceptance throughout...
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P Channel | 100V | 19A | 0.2ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF7313TRPBF
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SC16809 |
Dual MOSFET, N Channel, 30V, 6.5A, 0.023 Ohm, SOIC, SMD INFINEON The IRF7313TRPBF is a dual N-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device. The HEXFET Power MOSFET is extreme...
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N Channel | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI2342DS-T1-GE3
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SC16873 |
SMD N Channel Power MOSFET, 8V, 6A, 0.014 Ohm, SOT-23 VISHAY • TrenchFET® Power MOSFET • 100% Rg Tested • Built-in ESD Protection - Typical ESD Performance 3000V
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N Channel | 8V | 6A | 0.014ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STW12NK90Z
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SC16965 |
Power MOSFET, N Channel, 900 V, 11 A, 0.72 ohm, TO-247, Through Hole STMICROELECTRONICS • 900V, 11A N-channel zener protected SuperMESH™ power MOSFET in 3 pin TO-247 package • Extremely high dv/dt capability • 100% avalanche tested • Gate charge minimized • Very low intrinsic capacitance • Very good manufacturing repeatability • Suitable for...
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N Channel | 900V | 11A | 0.72ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC807,215
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SC16022 |
Bipolar (BJT) Single Transistor, PNP, -45V, -500mA, 250mW, SOT-23 NEXPERIA The BC807,215 is a PNP General-purpose Transistor with 3 leads, high current and low voltage, plastic surface mount package. Designed for switching and amplification applications. • 5pF Collector capacitance
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BSS138LT1G
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SC15995 |
Power MOSFET, N Channel, 50V, 200mA, 3.5 Ohm, SOT-23, SMD ONSEMI BSS138LT1G from On Semiconductor is surface mount, 50V N channel power MOSFET in SOT-23 package. Features low threshold voltage, ideal for low voltage applications. Typical applications include DC-DC converters, power management in portable and battery pow...
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N Channel | 50V | 200mA | 3.5ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRLR2905ZTRPBF
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SC15967 |
Power MOSFET, N Channel, 55V, 42A, 0.011 Ohm, TO-252AA, SMD INFINEON • Channel Type : N Channel • Drain Source Voltage Vds : 55V • Continuous Drain Current Id : 42A • Drain Source On State Resistance : 0.011ohm
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N Channel | 55V | 42A | 0.011ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N1893
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SC15753 |
Bipolar (BJT) Single Transistor, NPN, 80V, 500mA, 800mW, TO-39 MULTICOMP PRO The 2N1893 is a 80V Bipolar (BJT) Silicon NPN Transistor designed primarily for amplifier and switching applications. • High breakdown voltage • Low leakage current • Low capacity • Beta useful over an extremely wide current range • Multicomp Pro products ...
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FMMT493
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SC16073 |
Bipolar (BJT) Single Transistor, NPN, 100V, 1A, 500mW, SOT-23, SMD DIODES INC. FMMT493 is a 100V, 2A NPN silicon planar medium power transistor in a 3-pin SOT-23 package. • Transition frequency of 150MHz • Power dissipation (Pd) of 500mW • Continuous collector current of 1A • Operating temperature range from -55°C to 150°C
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BC858CLT1G
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SC16068 |
Bipolar (BJT) Single Transistor, General Purpose, PNP, 30V, 100mA, 225mW, SOT-23, SMD ONSEMI The BC858CLT1G is a PNP general purpose Bipolar Transistor is designed for use in linear and switching applications. The device is housed in the package which is designed for lower power surface-mount applications. • AEC-Q101 qualified and PPAP capable
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FZT953
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SC16103 |
Bipolar (BJT) Single Transistor, PNP, 100V, -5A, 3W, SOT-223, SMD DIODES INC. The FZT953 is a -100V PNP Complementary Medium Power High Current Transistor with matte tin plated leads solderable as per MIL-STD-202 standard, method 208. • High continuous collector current • Low saturation voltages • hFE specified up to -10A for a high...
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BSP75N
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SC16889 |
SMD N Channel Power MOSFET Switch, Enhancement Mode, 60V, 1.1A, 0.5 Ohm, SOT 223 DIODES INC. • Short-circuit protection with auto restart • Overvoltage protection (active clamp) • Thermal shutdown with auto restart • Over-current protection • Input protection (ESD) • High continuous current rating • Load dump protection (actively protects load) •...
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N Channel | 60V | 1.1A | 0.55ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZXMP10A13FTA
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SC16877 |
Power MOSFET, P Channel, 100 V, 700 mA, 1 ohm, SOT-23, Surface Mount DIODES INC. The ZXMP10A13FTA is a P-channel Enhancement Mode MOSFET with matte tin finish annealed over copper lead frame terminals and UL94V-0 flame-rated moulded plastic case. This MOSFET utilizes an unique structure combining the benefits of low on-state resistance...
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P Channel | 100V | 700mA | 1ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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VN2222LL-G
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SC15835 |
Power MOSFET, N Channel, 60V, 230mA, 7.5 ohm, TO-92 MICROCHIP • Channel Type : N Channel • Drain Source Voltage Vds : 60V • Continuous Drain Current Id : 230mA • Drain Source On State Resistance : 7.5ohm
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N Channel | 60V | 230mA | 7.5ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||