Transistors
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Channel Type | Drain Source Voltage Vds | Continuous Drain Current Id | Drain Source On State Resistance | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STW15NK90Z
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SC16941 |
Power MOSFET, N Channel, 900 V, 9.5 A, 0.4 ohm, TO-247, Through Hole STMICROELECTRONICS The STW15NK90Z is a 900V N-channel Zener-protected Power MOSFET developed using SuperMESH™ technology, achieved through optimization of well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is...
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N Channel | 900V | 9.5A | 0.4ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSH205G2R
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SC16811 |
Power MOSFET, P Channel, 20 V, 2 A, 0.12 ohm, TO-236AB, Surface Mount NEXPERIA The BSH205G2 is a P-channel MOSFET in a small surface-mount plastic package using Trench MOSFET technology. It is suitable for relay driver, high-speed line driver, high-side load switch and switching circuit applications. • Low threshold voltage • Low ON-...
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P Channel | 20V | 2A | 0.12ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BC847BPN,115
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SC16127 |
Bipolar Transistor Array, NPN, PNP, 45V, 100mA, 200mW, 200hFE, SC-88 NEXPERIA The BC847BPN from NXP is a surface mount NPN/PNP general purpose transistor in SOT-363 (SC-88) package. This transistor is characterized with low collector capacitance, low collector to emitter saturation voltage and closely matched current gain. It reduce...
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1+ €0.2142 (€0.26) 10+ €0.0952 (€0.12) 100+ €0.0476 (€0.06) |
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IRF5210PBF
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SC15831 |
Power MOSFET, P Channel, 100V, 40A, 0.06 ohm, TO-220AB INFINEON The IRF5210PBF is a P-channel HEXFET® Power MOSFET. This HEXFET® power MOSFET utilizes advance processing techniques to achieve extremely low 0n-resistance per silicon area. • Advanced Process Technology • New Ultra Low On-Resistance • Fast Switching • Dyn...
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1+ €1.6065 (€1.98) 10+ €1.309 (€1.61) 100+ €1.19 (€1.46) |
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P Channel | 100V | 40A | 0.06ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NTR2101PT1G
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SC16911 |
Power MOSFET, P Channel, 8 V, 3.7 A, 0.052 ohm, SOT-23, Surface Mount ONSEMI The NTR2101PT1G is a P-channel Small-signal MOSFET offers -8V drain source voltage and -3.7A continuous drain current. It is suitable for DC-to-DC converters, high side load switch, cellular phone, notebook, PDAs. • Leading Trench technology for low RDS (O...
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P Channel | 8V | 3.7A | 0.052ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DMG6602SVT
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SC16690 |
SMD Dual MOSFET, Complementary N and P Channel, 30V, 3.4A, TSOT-26 DIODES INC. The DMG6602SVT from Diode Inc is a surface mount complementary pair enhancement mode MOSFET in TSOT-26 package. This MOSFET features low input capacitance, fast switching speed and low input/output leakage, designed to minimize the onstate resistance and m...
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Complementary N and P Channel | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DMG1012T-7
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SC16742 |
Power MOSFET, N Channel, 20V, 630mA, 0.3 Ohm, SOT-523, SMD DIODES INC. DMG1012T-7 is a N-channel enhancement mode MOSFET. • Low on-resistance, low gate threshold voltage • Low input capacitance, fast switching speed • Low input/output leakage, ESD protected up to 2kV • Drain-source voltage is 20V at TA = +25°C • Gate-source v...
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N Channel | 20V | 630mA | 0.4ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRLML2060TRPBF
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SC16789 |
Power MOSFET, N Channel, 60 V, 1.2 A, 0.356 ohm, SOT-23, Surface Mount INFINEON The IRLML2060TRPBF is a N-channel HEXFET® Power MOSFET with lower switch losses and increased reliability. Compatible with existing surface mount techniques. • Industry-standard pinout • MSL1, Consumer qualification • Environment-friendly • Increased relia...
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N Channel | 60V | 1.2A | 0.356ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N6109
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SC15381 |
Bipolar Transistor, PNP, 50V, 7A, TO-220 MULTICOMP PRO The 2N6109 is a -50V Silicon PNP Complementary Plastic Power Transistor designed for use in general purpose amplifier and switching applications. • DC current gain (hfe = 30 to 150 at Ic = 7A) • Collector-emitter sustaining voltage (Vceo (sus) = 50VDC mini...
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1+ €0.5831 (€0.72) 10+ €0.4879 (€0.60) 50+ €0.4284 (€0.53) |
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MJ15003G
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SC15816 |
Bipolar (BJT) Single Transistor, Audio, NPN, 140V, 20A, 250W, TO-3 ONSEMI The MJ15003G is a Power Transistor designed for high power audio, disk head positioners and other linear applications. High safe operating area and high DC current gain. Ideal for low distortion complementary designs. • 140VDC Collector-base voltage • 0.70...
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1+ €7.2471 (€8.91) 10+ €6.9972 (€8.61) 50+ €6.6402 (€8.17) |
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PBSS8110T,215
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SC16078 |
Bipolar (BJT) Single Transistor, NPN, 100V, 1A, 300mW, SOT-23, SMD NEXPERIA The PBSS8110T is a 1A NPN breakthrough-in small signal (BISS) Transistor housed in a surface-mount plastic package. • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • Higher efficiency leading to less heat ge...
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FDA59N30
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SC16993 |
Power MOSFET, N Channel, 300 V, 59 A, 0.047 ohm, TO-3P, Through Hole ONSEMI The FDA59N30 is a 300V N-channel UniFET™ MOSFET based on planar stripe and DMOS technology. This high voltage MOSFET is tailored to reduce on-state resistance and to provide better switching performance and higher avalanche energy strength. The body diode'...
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N Channel | 300V | 59A | 0.047ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFPG50PBF
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SC16978 |
Power MOSFET, N Channel, 1 kV, 6 A, 2 ohm, TO-247AC, Through Hole VISHAY The IRFPG50PBF is a 1000V N-channel enhancement-mode Power MOSFET with single configuration. This third generation Power MOSFET from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low ON-resistance. It a...
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1+ €2.4633 (€3.03) 10+ €2.38 (€2.93) 50+ €2.1539 (€2.65) |
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N Channel | 1kV | 6A | 2ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSH201,215
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SC16756 |
Power MOSFET, P Channel, 60 V, 160 mA, 2.1 ohm, SOT-23, Surface Mount NEXPERIA The BSH201,215 is a P-channel enhancement mode Field-Effect Transistor in a plastic package using vertical D-MOS technology. Suitable for high frequency applications due to fast switching characteristics. • Logic-level compatible • Very fast switching • Lo...
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P Channel | 60V | 160mA | 2.1ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NTR4003NT1G
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SC16762 |
Power MOSFET, N Channel, 30 V, 560 mA, 1.5 ohm, SOT-23, Surface Mount ONSEMI The NTR4003NT1G is a N-channel Small-signal MOSFET offers 30V drain source voltage and 0.5A continuous drain current. It is suitable for notebooks used as level shifters, logic switches and low side load switches. • Low gate voltage threshold VGS (th) to f...
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N Channel | 30V | 560mA | 1.5ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDC658AP
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SC16747 |
Power MOSFET, P Channel, 30 V, 4 A, 0.044 ohm, SuperSOT, Surface Mount ONSEMI The FDC658AP is a logic level single P-channel MOSFET produced using advanced PowerTrench® process. It has been optimized for battery power management, load switch and DC-to-DC conversion applications. • Low gate charge • High performance Trench technology...
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P Channel | 30V | 4A | 0.044ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC847BDW1T1G
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SC16124 |
Bipolar Transistor Array, NPN, 45V, 100mA, 380mW, 450 hFE, SOT-363 ONSEMI The BC847BDW1T1G is a NPN dual Bipolar Transistor Array designed for general purpose amplifier applications. It is designed for low power surface-mount applications. • Halogen-free • -55 to 150°C Junction temperature range
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SUD50P10-43L-E3
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SC16863 |
Power MOSFET, P Channel, 100 V, 38 A, 0.036 ohm, TO-252AA, Surface Mount VISHAY The SUD50P10-43L-E3 is a P-channel TrenchFET® Power MOSFET with 175°C operating temperature. • ±20V Gate-source voltage
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P Channel | 100V | 38A | 0.036ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N7002K
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SC15990 |
Power MOSFET, N Channel, 60V, 300mA, 2 Ohm, SOT-23, SMD ONSEMI The 2N7002K is a N-channel enhancement mode Field Effect Transistor features low on resistance, low gate threshold voltage, low input capacitance and fast switching speed. • Low input/output leakage • ±20V Gate-source voltage
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N Channel | 60V | 300mA | 2ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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PMV16XNR
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SC16871 |
Power MOSFET, N Channel, 20 V, 6.8 A, 0.016 ohm, TO-236AB, Surface Mount NEXPERIA The PMV16XN is a N-channel enhancement-mode FET in a small surface-mount plastic package using Trench MOSFET technology. It is suitable for use in LED driver, low-side load-switch and switching circuit applications. • Low threshold voltage • Very fast swit...
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N Channel | 20V | 6.8A | 0.016ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ULN2004D1013TR
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SC16139 |
Bipolar Transistor Array, Darlington, NPN, 50V, 500mA, 1000hFE, SOIC STMICROELECTRONICS ULN2004D1013TR is a high-voltage, high-current Darlington array containing seven open collectors Darlington pairs with common emitters. Each channel is rated at 500mA and can withstand peak currents of 600mA. Suppression diodes are included for inductive l...
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BC556BTA
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SC15787 |
Bipolar (BJT) Single Transistor, PNP, -65V, -100mA, 500mW, TO-92 ONSEMI The BC556BTA is a PNP epitaxial silicon Bipolar Transistor suitable for switching and amplifier applications. • High voltage VCEO • Complement to BC546
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BCV47,215
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SC16011 |
Bipolar (BJT) Single Transistor, NPN, 60V, 500mA, 250mW, SOT-23, SMD NEXPERIA The BCV47 is a NPN Darlington Transistor with medium current and low voltage, high DC current gain. Used in preamplifier input stages. • Complement to BCV46
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MJD122T4G
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SC16081 |
Bipolar (BJT) Single Transistor, Darlington, NPN, 100V, 8A, 20W, TO-252 (DPAK), SMD ONSEMI The MJD122T4G is a 8A NPN bipolar power Darlington Transistor designed for general purpose amplifier and low speed switching applications. It is the surface-mount replacement for 2N6040 to 2N6045 series, TIP120 to TIP122 series and TIP125 to TIP127 series....
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IRF7240TRPBF
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SC16857 |
Power MOSFET, P Channel, 40 V, 10.5 A, 0.015 ohm, SOIC, Surface Mount INFINEON The IRF7240TRPBF is a HEXFET® single P-channel Power MOSFET utilizes advanced processing techniques to achieve the extremely low ON-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and lo...
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P Channel | 40V | 10.5A | 0.015ohm |